1. Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
- Author
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Hong Zhu, Yunlong Huai, Baile Chen, Yong Huang, Ming Liu, He Zhu, Meng Li, Jiafeng Liu, Yan Teng, Xiujun Hao, Zhuo Deng, and Weirong Xing
- Subjects
Diffraction ,Materials science ,General Computer Science ,focal plane array ,Infrared ,Superlattice ,02 engineering and technology ,Noise-equivalent temperature ,Long-wavelength infrared ,Responsivity ,020210 optoelectronics & photonics ,0202 electrical engineering, electronic engineering, information engineering ,General Materials Science ,Metalorganic vapour phase epitaxy ,Electrical and Electronic Engineering ,InAs/GaSb superlattice ,metalorganic chemical vapor deposition ,business.industry ,General Engineering ,021001 nanoscience & nanotechnology ,TK1-9971 ,Optoelectronics ,Electrical engineering. Electronics. Nuclear engineering ,0210 nano-technology ,business ,Molecular beam epitaxy ,Dark current - Abstract
High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE). In this work, we demonstrate the first long-wavelength infrared InAs/GaSb superlattice FPA grown by metalorganic chemical vapor deposition (MOCVD) with clear image. High-quality superlattice material was obtained evidenced by sharp X-ray diffraction peaks and atomic flat surface. Electrical and optical measurements performed on single element detectors showed a 50% cut-off wavelength of $\sim 10.1~\mu \text{m}$ , a dark current density of $2.5\times 10^{-5}$ A/cm2, a peak responsivity of 0.88 A/W and a peak detectivity of $1.7\times 10^{11}$ cm $\cdot $ Hz1/2/W at 80 K. A $320\times256$ FPA with $30~\mu \text{m}$ pixel pitch was then fabricated. With an integration time of 1.9 ms and an applied bias of -0.1 V, the FPA shows an average operability of 96.96%, a non-uniformity of 4.97%, a noise equivalent temperature difference of 51.1 mK and a peak detectivity of $2.3\times 10^{10}$ cm $\cdot $ Hz1/2/W at 80 K without thinning down the substrate.
- Published
- 2021