1. E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development
- Author
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Pei Chin Chiu, C.-Y. Chien, D.-W. Fan, Pei-Wen Li, Chih-Hsin Ko, Yu-Chao Lin, H.-K. Lin, Clement Hsingjen Wann, Meng-Kuei Hsieh, Wen-Chin Lee, Ta-Ming Kuan, and J.-I. Chyi
- Subjects
business.industry ,Band gap ,Subthreshold conduction ,Chemistry ,Wide-bandgap semiconductor ,Electrical engineering ,High-electron-mobility transistor ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Impact ionization ,Semiconductor ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Leakage (electronics) ,High-κ dielectric - Abstract
Considerable on-state impact ionization and off-state tunneling leakages are the two principal drawbacks of InAs/AlSb HEMTs, which have a small bandgap and type-II band lineup. This work introduced a wide-bandgap high-k Al2O3 between the gate metal and semiconductor surface and successfully demonstrated DC and RF performance of the InAs/AlSb metal–oxide–semiconductor HEMTs (MOS-HEMTs). An MOS-HEMT device with a 2.0 μm gate length yields DC performance of IDSS = 286 mA/mm and Gm = 495 mS/mm and RF performance of fT = 10.1 GHz and fMAX = 19.9 GHz. Compared with a conventional HEMT, gate leakage is reduced by one order and the marked dependence of drain current on gate bias in the deep subthreshold region is largely alleviated.
- Published
- 2010
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