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In this paper, we report on fabrication and physical properties of carbon microcoils, which are prepared by a chemical vapor deposition (CVD) process with Ni-catalyzed pyrolysis of acetylene, and characterized by a scanning electron microscope, a transmission electron microscope and an infrared spectrometer. The dark electrical conductivity of an isolated carbon microcoil is about 81 S/cm at room temperature, and its temperature dependence follows three-dimensional Mott variable-range hopping (VRH) model. Particularly, evident photocurrent is observed in the carbon microcoil upon cameral flash illumination. In addition, it is found that the surface of microcoil film is hydrophobic, showing a large water contact angle of about 135°. These results indicate that carbon microcoils have excellent physical properties, and can be used as optoelectronic and reinforced materials.

In this study, focused gallium ion (Ga+) beam is utilised to fabricate micro/submicron spacing gratings on specimen surface. The grating types include: parallel, cross, and hybrid (grating with double-frequency). Several hybrid gratings with double frequency were produced in combination mode or superposition mode, which have a good potential to measure deformation within different range. Techniques for producing different type of gratings are discussed in detail. As an application, a 5000 lines/mm grating was fabricated on an amorphous SIC MEMS cantilever and was successfully used to measure its virtual strain with aid of digital moiré. The experimental results verify the feasibility of fabricating high frequency grating on metal or non-metal surface using the FIB milling and the resultant grating can be used to measure micro-deformation.

Nanoscaled silicon cone arrays were formed on mirror-polished silicon wafers by plasma etching using hot filament chemical vapor deposition (HFCVD) system. A mixture of CH4 and H2 was introduced during silicon cone formation. AlN films were coated on Si cone arrays using radio frequency (RF) magnetron sputtering system. Scanning electrons microscopy (SEM) was employed to characterize the morphology of silicon cone arrays before and after AlN coating. The field emission characteristics of AlN coated silicon cone arrays，uncoated silicon cone arrays and AlN films were studied and compared, and the silicon cone arrays with AlN coating showed the best enhanced electron emission properties due to the negative electron affinity of AlN coating layer and the high aspect ratio of silicon cone. For AlN coated silicon cone arrays, a slight hysteresis between the upward and downward voltage sweeps was also observed and the field emission currents from AlN coated Si nanocone arrays decreased with the increase of the thickness of AlN films, which could be mainly attributed to the space charge buildup in AlN film with wide band gap.

Sub-micrometer diamond tube arrays are formed on freestanding diamond film via focused ion beam pattern technology and chemical etching method. First, the sub-micrometer holes are fabricated on Si substrate by using FIB milling method. Then, diamond film is grown by hot filament chemical vapor deposition method on patterned Si substrate. By controlling the deposition parameters, the diamond can be grown along the wall of holes and the diamond tubes in sub-micrometer scale are formed. Finally, Si substrate is etched by chemical etching method and the diamond tube arrays are fabricated on a freestanding diamond film. Scanning electron microscopy and Micro-Raman spectroscopy measurements are performed to characterize the structure and phase purity of diamond tubes. The electron emission properties from the diamond tube arrays are studied, the result presents that the enhanced emission property can be obtained from diamond tube arrays.