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ResumeIntroduction En aout 2015, la Food and Drug Administration (FDA) des Etats-Unis autorise la mise sur le marche de la flibanserine, premier traitement du trouble du desir sexuel hypoactif (HSDD) chez la femme non menopausee. L’objectif de notre etude etait de realiser une revue de la litterature afin d’evaluer l’efficacite et la securite de la flibanserine. Patients et methodes Une revue systematique de la litterature a partir de la base de recherche PubMed a ete effectuee jusqu’en avril 2016 en utilisant les mots cles suivants : « HSDD », « Flibanserin », « sexual desire » et « ransomised controlled trial ». Resultats Nous avons retrouve 4 etudes randomisees en double aveugle et deux meta-analyses et revues de la litterature. Les resultats etaient evalues en difference de moyenne standard de la flibanserine par rapport au placebo. Concernant le critere principal « evenement sexuel satisfaisant » (SSE), la difference moyenne standard (DMS) variait de 0,49 a 1 (p

Journal de Gynecologie Obstetrique et Biologie de la Reproduction - Vol. 41 - N° 3 - p. 227-234

When prepared by the sol-gel dip-coating technique, doped tin oxide films need several superimposed layers to reach the expected low sheet resistance. In this paper we show that successive depositions increase the uniformity and homogeneity of multi-layered sol-gel tin oxide films. The final thickness is always found to be lower than a multiple of the initial first layer thickness, indicating that densification occurs. A strong improvement of physical properties is jointly observed in this multilayered configuration. All parameters (atomic density, refractive index, electrical resistivity, optical transmission and reflectivity) evolve towards bulk material values. This is explained by the fact that the sol, in which is dipped the substrate, fills in the pores or cracks remaining in the previously deposited layers. The quality of the sol-gel tin oxide stacked deposits obtained in such a way is evidenced by the M-line spectroscopy experiments presented in this paper. It is shown that multilayered coatings are able to guide light over some millimetres.

Transparent conducting thin films of antimony-doped tin oxide have been deposited by the sol-gel dip-coating (SGDC) method. Electrical properties are analyzed, and resistivity, Hall mobility, type and nunber of carriers measured as a function of the antimony doping. Optical properties are investigated through the spectral transmision and reflection of the layers. The nature of the forbidden band and the width of the gap are determined. Optical and electrical properties are compared with results obtaned on Sb:SnO 2 thin films elaborated by other methods such as chemical vapour deposition, sputtering and pyrolysis, and specific properties of the SGDC material are outlined.

In the sol-gel technology, either for bulk or thin films, the stability in time of the solutions is a major factor to control. An evolution of the solution may influence strongly the properties of the elaborated material (thickness, cracks, refractive index, conductivity, etc.), and cases have been reported where solutions had to be stored in a dry and cold place to prevent any hydrolysis-condensation reaction, and so any consequent gelation.

International audience; PURPOSE:Aortic stiffness is a functional and structural consequence of ageing and arteriosclerosis. Regional arterial stiffness can be easily evaluated using pOpmetre(®) (Axelife SAS, France). This new technique assesses the pulse wave transit time (TT) between the finger (TTf) and the toe (TTt). Based on height chart, regional pulse wave velocity (PWV) between the toe and the finger can be estimated (PWVtf). pOpscore(®) index is also calculated as the ratio between PWVtoe and PWVfinger and can be considered as a peripheral vascular stiffness index. The aim of the study was to evaluate the relationship between pOpmetre(®) indices and the presence of carotid plaques in a population with cardiovascular risk factors.METHODS:In 77 consecutive patients recruited for a vascular screening for atherosclerosis (46 men aged 54 ± 2 years; 31 women aged 49 ± 3 years; ns), the difference between TTt and TTf (called Dt-f), the regional pulse wave velocity between the toe and the finger (PWVtf = constant × height/Dt-fm/s) and pOpscore(®) were measured by pOpmetre(®). Presence of carotid plaques was assessed using ultrasound imaging. The local aortic stiffness (AoStiff) was evaluated by the Physioflow(®) system.RESULTS:No difference was found between patients with or without carotid plaques (n=25 versus 52) for Ankle-Brachial Pressure Index (ABPI: 1.15 ± 0.04 versus 1.12 ± 0.03), nor for diastolic or systolic blood pressure (87 ± 3 versus 82 ± 2; 137 ± 3 versus 132 ± 2 mmHg). The first group was older than the second (59 ± 2 versus 49 ± 2 years, P

THOMSON-CSF Semiconducteurs Specifiques (TCS) and the CEA-LETI have developed a 0.8 /spl mu/m SOI bulk compatible process (HSOI4CB) for space and battle field applications. The main motivation for this process is to allow the transfer of already existing bulk circuits onto SOI with reduced redesign effort and performances degradation. In this paper, SOI process (HSOI4CB) and the 68020 transfer are summarized, including the most significant characteristics of the resulting product (68T020), in terms of Single Event Upset (SEU) and Single Event Latch-up (SEL). For the same revision version, the 68T020 comparisons with bulk or epitaxial 68020 processes are given. >

A new rad-hard technology suitable for high energy physics electronics is currently under development. This technology uses a SOI substrate with a thick silicon film. It includes CMOS, CJFET and complementary vertical bipolar transistors with a potential multi-Mrad hardness for all these devices. These devices enable the design of both analog and digital functions. CMOS together with bipolar transistors will constitute a BiCMOS technology which will be useful to build high speed architectures. JFETs, which have an intrinsically high hardness behaviour and low noise, should allow the design of very radiation-hard low-noise front-end electronics and are also good candidates for cryogenic applications.

An 8-bit, 20-MHz flash ADC (analog-to-digital converter) using a radiation-hardened SOI (silicon on insulator) process is presented. The circuit is capable of operating at up to 20 MHz, even after a total dose exposure of 100 Mrad (SiO/sub 2/) (10 keV X-rays). Simultaneous use of a rad-hard technology and optimized design in order to withstand the effects of a total dose made it possible to achieve a rad-hard product. >

Contact resistances of multiwalled nanotubes deposited on gold contact fingers are very large. We show that the contact resistances decrease by orders of magnitudes when the contact areas are selectively exposed to the electron beam in a scanning electron microscope. The focused electron beam enables the selection of one particular nanotube for electrical measurement in a four-terminal configuration, even if a loose network of nanotubes is deposited on the gold electrodes. For all measured nanotubes, resistance values lie in a narrow range of 0.35–2.6 kΩ at room temperature.

Recent publications report a magnetic in-plane anisotropy in FeCo films and multilayers. This property can be exploited for example to polarize neutrons in a small external field and the remanent magnetization can serve to use the mirrors as a spin selective device. In this work a study on Fe0.50Co0.48V0.02 films and multilayers in combination with Ti:N has been performed with regard to the connection between stress in the coating and the in-plane anisotropy using SQUID and MOKE magnetometry as well as mechanical and X-ray stress analysis. The results prove the magnetostrictive nature of the anisotropu resulting from the condensation of sputtered particles arriving at the surface under oblique incidence. The dependence of the remanence on the thickness of the deposited layer is accentuated in this work. For samples as old as 2 years we have observed a small degree of stress relaxation.