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A hybrid fiber coaxial (HFC) network uses both optical fibers and coaxial cables for cable TV networks. Coaxial cables are mainly used for access networks. Recently, fiber to the home (FTTH) is being widely deployed. For cable TV companies to utilize readily deployed FTTH, legacy coax network-based customer premise equipment (CPE) such as cable modems and set top boxes may have to be replaced with fiber network based CPE. In order to reduce the expenditure incurred in this process, radio over Internet Protocol (RoIP) technology has been proposed. In the RoIP system, RF signal for coax generated by legacy CPE toward the headend is first sampled, and digitized, and then encapsulated in IP packets, which are then sent to the headend using FTTH access technologies such as passive optical network (PON). In the process of digitizing RF signal, a huge amount of data much more than the base band data is generated. So, a data compression method is required to lower the upstream bit rate maintaining the signal quality. Most compression methods are significantly degraded due to the interference caused by burst noise in the upstream link. Therefore, this paper proposes a new compression method which combines linear predictive coding (LPC), block scaling and non-linear quantization for CATV upstream links. The proposed method is demonstrated to greatly reduce the impact of burst noise while maintaining the compression performance.

The Internet of Vessels has drawn more and more attention because the shipping efficiency and shipping safety can be increased, and the development of world transportation can easily be augment. Deep learning (DL) has been recognized as very promising for solving bottlenecks in the evolution of next generation communication systems. To adapt to the particularity of the marine environment, Rician fading channel is selected as the channel model for maritime communication. We propose a Convolutional Neural Network based end-to-end Autoencoder (CNN-AE) for the maritime communication system. A 1-dimensional convolution layers is introduced in AE. We investigate the characteristics of the maritime channel and optimize performance by redesigning the parameters. Compared with the existing schemes, the proposed CNN-AE maritime communication system not only inherits the characteristics of traditional AE system which can optimize all modules jointly, but also has the merits of CNN's local connection which can support more information. Simulation results show that under the same condition of input bit lengths and coding rates, when the values of Ricean K-factor increase, the Block Error Rates (BLER) of the system decrease. When the burst noise is added, the BLER grows as the noise increases. When the Ricean K-factor is the same, the BLER decreases as the coding rate decreases.

We experimentally observe common-signal-induced synchronization between two semiconductor lasers driven by a broadband optical noise signal. We use a super-luminescent diode as a source of the optical noise signal, whose bandwidth is over THz. Synchronization is achieved even without injection locking between the drive noise signal and the semiconductor lasers; however, the optical wavelengths of the two semiconductor lasers need to be precisely matched. We investigate the parameter dependence of synchronization on the injection strength of the drive signal and the relaxation oscillation frequency of the semiconductor lasers. We apply optical band-pass-filters to change the bandwidth of the noise signal, and investigate the quality of synchronization. We found that high-quality synchronization can be achieved when the bandwidth of the optical spectra of the semiconductor lasers are within the bandwidth of the optical noise signal.

Small semiconductor structures often exhibit "telegraph noise". If the number of charge carriers is small, then spontaneous changes in the number of carriers can lead to abrupt switching between two or more discrete levels, leading to burst noise or popcorn noise in transistors. We have observed similar behavior in the fluorescence of organic semiconductor nanoparticles, where typical carrier populations are often less than ∼10 carriers per nanoparticle. Spontaneous changes in the number of charges results in abrupt switching between 2 or more fluorescence intensity levels, because the charges act as highly efficient fluorescence quenchers. The equilibrium number of charges is determined by competition between a photodriven ionization process and spontaneous recombination. Doping with redox-active molecules also affects the balance. Nanoparticles of the conjugated polymer PFBT doped with the fullerene derivative PCBM, rapidly establish a fluctuating steady-state population of tens of hole polaron charge carriers, sufficient to nearly completely suppress nanoparticle fluorescence. However, fluctuations in the number of charges lead to occasional bursts of fluorescence. This spontaneous photoswitching phenomenon can be exploited for superresolution imaging. The repeated, spontaneous generation of short, intense bursts of fluorescence photons results in a localization precision of ∼0.6 nm, about 4 times better than typical resolution obtained by localization of dye molecules.

The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture–emission process.

To explain the current dependences of the mean-square value of low-frequency (LF) noise current in green InGaN light emitting diodes (LEDs), a double stage low-frequency noise equivalent circuit of the LED is proposed. It is shown that the nonmonotonic dependence of the LF noise on the injection current in the LED can be explained by the effect of two LF noise generators: a noise current generator, which is localized near the heterojunction and is determined by tunnel-recombination processes at the interface, and a generator determined by recombination processes in the active region of the structure.

In every wireless communication the data that is transferred is at a high risk of falling under the clutches of various types of disturbances termed as noise, there are various types of noises which are thermal noise, shot noise, IF noise, burst noise, avalanche noise etc. they occur due to a number of factors it can be due to temperature, device malfunctioning and frequency interference. Due to this, the data being transferred in the wireless communication channel gets corrupted resulting in data loss. This problem is rectified by employing FEC (Forward Error Correction) method on the data being transferred. This research focuses on the implementation of various FEC codes in CDMA system to study its detailed performance analysis with the help of MATLAB Software.

In part I, we extensively analyzed the results of the low-frequency noise characterization in advanced SiGe:C heterojunction bipolar transistors. In this paper, we demonstrate that base and collector noise spectral densities are partially correlated. The correlation is investigated by studying the coherence function at different bias conditions. The coherence reveals a frequency dependence at lower bias due to the presence of dominant generation–recombination mechanisms, whereas at higher bias, the coherence approaches unity. The bias dependence of the coherence is studied in several transistor geometries. In addition, a partially correlated base and collector 1/f noise model is proposed and implemented in HiCuM. Modeling results are in agreement with the measured data.

In this paper, we present extensive characterization of low-frequency noise in advanced silicon germanium heterojunction bipolar transistors. We demonstrate the extraction methodology of base and collector noise spectral densities for a wide range of transistor geometries. In addition to 1/ $f$ noise, generation–recombination (G–R) mechanisms are observed at low bias in the base current noise. Their existence is confirmed by Random Telegraph Signal (RTS) noise measurements. 1/ $f$ and G–R components are extracted from the base current noise spectra and their bias dependencies are studied. Finally, base current noise spectral densities measured at the same base current density in different geometries are compared to study the individual contribution of 1/ $f$ noise from the periphery as well as the intrinsic device. Part II of this paper will discuss the modeling aspects and noise correlation.

Noise in Power Line Communications is typically impulsive, with impulses being a fraction of the OFDM symbol length. Because of their large duration the impulse can also be called bursts. The short duration of the burst compared with the OFDM symbol length implies that there is a strong correlation between the noise at different carriers, given a determined burst position. The position can be determined using an estimate of the noise after a first demodulation. The high correlation is used to develop demodulators with a reduced bit error rate in comparison with conventional demodulators, so increasing the capacity. The demodulators use a smoothed estimate of the noise signal or a new metric for the distance based on the new correlation matrix. About half of the bit errors can be corrected in this way, corresponding to a 1 dB improvement in Signal Noise Ratio (SNR). How to split the OFDM symbol without increasing the overhead due to the circular prefix is also shown. Noise measurements in power lines are presented. These measurements are used in the simulations.

Proposed method of calculation of flicker-noise power provided in published experimental results regarding investigation of flicker processes in real material of electronic devices. It is shown that during evaluation of signal/noise ratio in electronic devices in the range of low frequencies the flickernoise level should be taken 3–4 times bigger than the thermal noise level.

In this paper, an improved radio-frequency (RF) noise model is extended for silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) by applying RF avalanche delay mechanism to investigate noise performance in the breakdown region where reliability is a concern. The impact of inductive feedback due to base–collector (BC) junction avalanche breakdown on noise performance is analyzed and explained by utilizing this improved noise model incorporating an inductive network. The avalanche effects on noise sources are verified and explained physically by the dead-space theory. The contributions of electrons and holes to the avalanche noise are taken into account by including an electron- and hole-breakdown network in the presented noise model. The presented method is compared with the conventional approach. When the avalanche noise is absorbed by base and collector noise sources as in the conventional RF noise model without a breakdown network, simulated noise parameters deviate from experimental data at breakdown. Instead, good agreement between measured and simulated noise parameters and $S$ -parameters from the presented RF noise model is achieved in the inductive breakdown and active regions. The presented noise model and the obtained parameters can be applied to SiGe HBT circuits for reliability investigation.

Auscultation for a carotid bruit is an unreliable test, but the real action takes place between the stethoscope’s earpieces.

Variation of low frequency noise including 1/f noise and Lorentzian spectra is the dominant source of variations for noise equivalent power (NEP) of THz detectors using a forward biased diode connected NMOS transistor. Elimination of the impact of low frequency noise variation to NEP with 1-V amplitude AC biasing at 44MHz is demonstrated in 830-GHz detectors using a diode connected PMOS transistor. It should be possible to apply this technique to eliminate the impact of low frequency noise variations in THz NMOS and Schottky diode detectors. Lastly, the low frequency noise voltage power spectral density of AC biased diode connected PMOS transistors is comparable to that of commercial GaAs detectors.

Applied Physics B, 82 (2), ISSN:0946-2171, ISSN:1432-0649, ISSN:0721-7269, ISSN:0340-3793

Made available in DSpace on 2018-12-11T17:25:01Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-11-01 In this paper, the low-frequency (LF) noise in standard n-channel triple-gate Bulk FinFETs has been experimentally investigated with variation in the fin widths (WFin), channel lengths (L) and gate dielectric. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in 3D device architectures. Although the device scaling brings the idea of noise reduction, we show the opposite behavior because already single electron trapping has a marked impact on the device operation. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2-like), associated with generation-recombination (GR) noise. In addition, the gate-voltage-dependent GR noise peaks have been studied, which are assigned to gate oxide traps. UNESP - Univ Estadual Paulista, Group of Automation and Integrated Systems, Av. Três de Março, n. 511 LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav. 3, n.158 Imec, Kapeldreef 75 E. E. Department, KU Leuven, Kasteelpark Arenberg 10 UNESP - Univ Estadual Paulista, Group of Automation and Integrated Systems, Av. Três de Março, n. 511

In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.

In this paper, it is theoretically shown and experimentally verified that operation of switch-mode power supplies in burst mode (BM) results in lower audible noise than operation in frequency-foldback mode (FFM). However, the selection of the switching frequency in a burst package can have a significant impact on the audible noise. In both BM and FFM, the audible noise can be reduced by decreasing the peak value of current pulses and proportionally increasing the burst frequency in BM and the switching frequency in FFM. In BM, the audible noise can be further reduced if instead of increasing the burst frequency, the number of burst pulses is increased without changing the burst frequency. The presented BM and FFM audible noise analyses are experimentally verified on a dc–dc boost test circuit.

This work is a revision, application and comparison of the main models found in the literature for the transfer and noise functions in the channel for communications in power transmission lines (PLC ‑ power line communication). Considering the characteristics of brazilian residential electrical installations, comparisons of measurements with models for the transfer function, the ABCD transmission matrix model as the most efficient and flexible in the increase of the channel sections and branches. The series resonant circuit model may be very precise and allows the implementation of an analog channel emulator using discrete components. However the classical model with eco demonstrated a better theoretical basis for transmission lines. The six different types of noise present on the power grid were measured and modeled. A very realistic model is simulated using Markov chains for modeling the non-periodic impulsive and burst noise.

In this paper, a complete theoretical and experimental study of amplitude noise impact on performance of radio-over-fiber (RoF) communication system in millimeter-wave (MMW) frequency band is presented. A simulation method is also presented, using which one can determine the origin of the amplitude noise which has the most impact on error vector magnitude (EVM). This method is based on analyzing the trends of EVM versus received optical power. The impact of different optical and electrical noise such as relative intensity noise, shot noise and thermal noise on EVM is precisely studied employing experimental and theoretical analysis. In the proposed RoF system, two techniques are used to generate MMW signal, and the EVM results are compared from amplitude noise viewpoint. In the first technique, two independent distributed feedback lasers are used to generate MMW signal at the output of a photodetector, and the second technique is based on a passively mode-locked laser diode. Impact of optical sources phase noise on performance of the system is removed using a noncoherent down-conversion method based on envelope detector. Using this method, a very good matching between the experimental and the simulation results is observed.

The resonant surface acoustic wave (SAW) sensors have advantages in the harsh application environments. However, the burst noise in the same frequency range, signal shadowing and a range of weather conditions introduce strong interferences to the wireless measurement system. Inspired by the theory of low-rank matrix completion generalized from the compress sensing, an algorithm suitable for passive wireless SAW temperature sensor system, which requires none of system modeling, probability distribution assumption, and extra sensors to obtain the corrected current frequency, is used to correct errors in the resonant frequency measurement. The proposed method suitable for passive wireless SAW resonant sensor system is employed to correct the frequency estimation errors in the measuring process. The performance and its validity are verified by simulations and experiments.

According to the discussion of noise sources and up-conversion mechanisms of flicker noise, an LC oscillator with improved self-switched biasing and decoupling capacitor is presented. To minimize the 1/f3 phase noise, both source noise and conversion gain of flicker noise are desirable to reduce, rather than only one way in previous works. Flicker noise from tail-biasing transistors is reduced by self-switched biasing technology, and the up-conversion of flicker noise from cross-coupled pair is suppressed by decoupling capacitor at the same time. Phase noise and key parameters influencing phase noise are analyzed in detail. To guide the design, simple way to get optimum values of key parameters is also presented. This oscillator can work at low supply voltage to reduce power consumption considerably compared to conventional self-switched biasing. The proposed oscillator is fabricated in 0.18 μm CMOS process, and exhibits a low phase noise of ?77.5 dBc/Hz (FoM = 181) and ?122.8 dBc/Hz (FoM = 186) at 10 kHz and 1 MHz offset, respectively, from oscillation frequency of 2.55 GHz while dissipating 2.7 mA with 1.2 V supply voltage.

An analysis of the flicker noise conversion to close-in phase noise in complementary metal-oxide semiconductor CMOS differential inductance-capacitance LC-voltage controlled oscillator is presented. The contribution of different mechanisms responsible for flicker noise to phase noise conversion is investigated from a theoretical point of view. Impulse sensitivity function theory is exploited to quantify flicker noise to phase noise conversion process from both tail and core transistors. The impact of different parasitic capacitances inside the active core on flicker noise to phase noise conversion is investigated. Also, it is shown how different flicker noise models for core metal-oxide semiconductor MOS transistors may result in different close-in phase noise behaviors. Based on the developed analysis, design guidelines for reducing the close-in phase noise are introduced. Copyright © 2015 John Wiley & Sons, Ltd.

Based on high output saturation power of quantum dot semiconductor optical amplifiers, it has been shown that exploiting a saturating holding beam (HB) can effectively suppress amplitude noise with HB power as a tunability degree of freedom. A simultaneous study of amplitude noise and pattern effect induced at high data rates on the quality factor of output signal reveals that desirable $Q$ -factor level can be obtained through modifying the bias current density and HB power. An upper data rate limit for $Q$ -factor penalty-free operation at various input signals to noise ratios is also predicted. A wide power range for the applied HB is promising for developing a tunable noise suppression scheme.

In this paper, analytical models for high-frequency drain-current noise, gate-current noise, and their cross-correlation of MOSFETs are presented with an emphasis on the weak- and moderate-inversion regions. Unified expressions offering excellent continuity and smoothness from weak- to moderate- and strong-inversion regimes were developed. It is demonstrated that the continuity and the accuracy of the calculated four noise parameters, such as minimum noise figure, normalized noise resistance, and optimum source conductance and susceptance, are significantly improved in the weak- and moderate-inversion regions by using the proposed unified noise model, which includes the junction-induced drain-current noise. A figure-of-merit is introduced to determine the optimum gate biasing point of MOSFETs, where high gain can be achieved at low driving power and low operating noise. The results obtained from the proposed model manifest good agreement with the on-wafer measurement results.

Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian et al. proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.

The importance of BP as a risk factor for cardiovascular and renal disease is well established. In all BP trials, precise protocols are enforced when measuring BP to minimize extraneous factors that could obscure an individual’s true BP free from noise ([1][1]). However, despite these protocols

For efficient design of digital circuits operating under wide range of voltage voltages, RTN model incorporating the dependencies of both the gate area and supply voltage are required. In this paper, we characterize the delay distributions due to RTN under different supply voltages. The delay distributions are then converted to threshold voltage distributions by statistical analysis. Measurement results from a 65 nm Silicon-on-Thin-Buried-Oxide high performance process reveal that threshold voltage distribution remains almost the same across the supply voltages of 0.4 V to 1.0 V. Furthermore, nMOSFET and pMOSFET ΔΥτ distributions are also estimated to be identical. However, low correlation has been observed between the RTN amplitudes across the supply voltages which is a concern for testing and post-silicon tuning methods.

OFDM (Orthogonal Frequency Division Multiplexing) system is one of the most widely used power line communication (PLC) systems, and the noise of power line channel is one of the main factors that affects the reliability of power line communication. The development of power line communication technology is of great practical significance for the remote monitoring and remote meter reading of power system, and it plays an irreplaceable role in the development of smart grid. In this paper, the OFDM system model of data flow were set up on the basic principle of OFDM communication system, and the circuits are also set up to measure the noise on the power line. According to the measured data, the power line colored background noise model, narrowband noise model and burst noise model are set up respectively. For each noise model the calculations and simulations have been carried individually in the paper. Finally, the simulations by changing the encoding method and SNR (Signal to Noise Ratio) of the OFDM system have been carried. Eventually the effect of encoding and SNR of the OFDM system for the BER (Bite Error Rate) and the results of simulations by curve graphs are presented. In the end of the paper, some advice to improve the quality of PLC in different noise environment based on the experimental results are giving. The paper may be useful to the studies of PLC and the optimization of power system.

Here we report on the efficient detection of THz radiation generated from Ti:sapphire femtosecond laser system. The large-area interdigitated antenna is excited by optical pulses with pulse duration from 15 to 47 fs. We have tested two AlGaN/GaN HEMT-based THz detectors with integrated broadband antennas. Detectors are comparable in sensitivity but differ in applied parasitic signals elimination techniques. Despite being sensitive, the pick-up of the first detector without strong parasitic elimination exceeded the theoretically expected noise level about 100 times. For a second detector we have implemented more stringent interference avoiding techniques, such as gate shunting with a low resistance value resistor, and have managed to significantly improve system's detection capabilities. We have lowered a pick-up near to the thermal noise level and have extended signal/noise ratio to 26 dB.

We discuss the thermal noise and the effect of input noise sources on the output noise of plasmonic Field Effect Transistors operating in a quasi-ballistic regime. The input noise strongly affects the output noise at large signals and when the detectors operate near the threshold, where the highest responsivity is reached. In the detection regime with a finite drain current, 1/f noise becomes dominant at low noise frequencies, and similar mechanisms determine the contribution of the input noise to the output noise. The effect of the input noise in the plasmonic THz detectors on their output noise analyzed based on the numerical solution of the hydrodynamic equations is in qualitative agreement with the analytical model but reveals the importance of plasmonic ringing even in the devices with the extracted mobilities of 3500 cm2/Vs with the gate length of 130 nm. These results are important for designing plasmonic sensors using the frequency dependencies of the low frequency output noise for identifying different gas and liquid substances.

We propose a simple topology for the realization of ultra low noise differential-input, differential-output preamplifiers. The input devices can be either low noise JFET pairs (for high impedance sources) or low noise BJT pairs (for minimum low frequency voltage noise). Besides the input devices, the circuit requires only two matched low noise BJT transistor pairs (either PNP or NPN, depending on the input device type) and a few excess noise free resistors for consistently obtaining differential gains of 100 (40 dB) with a bandwidth in excess of 100 kHz and an equivalent input noise floor comparable to (or better than) those reported in the literature for similar devices. The preamplifier is to be regarded as an off-the-shelf component that can be employed as a building block for a number of applications in the field of low frequency noise measurements.

We present an investigation of shot noise in graphene-based Hall sensors, with the purpose of evaluating their detection limit and of developing strategies to improve their characteristics. We perform measurements on two devices, one with a defective contact that could however be used as a gate to control the carrier density in the device and the other with all contacts working. We discuss the results in terms of the dependence of the noise power spectral density on the carrier density and on the DC bias current. Finally, we provide an estimate of the detection limit, pointing out that the approach commonly used in the literature for its evaluation is flawed.

The standard DC and RF and characteristics were measured for the 28 nm p- and n- type MOSFETs. The charge based compact model EKV3 parameters were extracted and verified against measured data. Noise parameters for both n- and p-MOSFETs were measured and analyzed in terms of gate induced noise correlation with the drain current noise, short channel effects related noise. The PRC noise model as well as drain current and gate current noise spectral densities were extracted and analyzed. Measured harmonic distortion at 2.5, 5 and 8 GHz exhibits excellent linearity and in a perfect agreement with EKV3.

In this paper, we present a consistent perspective to interpret the channel noise of MOSFETs as suppressed shot noise for both long- and short-channel devices. We also derive an easy-to-use analytical equation for the shot noise suppression factor of MOSFETs working in the saturation region. The expression only relies on two process parameters - threshold voltage and effective oxide thickness, to predict the level of suppression for any CMOS technology. Together with the shot noise limit 2qI D , the suppression factor can accurately model MOSFET channel noise without invoking the channel length modulation effect. Moreover, we compare the modeled suppression factors with experimental values extracted from published experimental data in 180-nm and 40-nm technologies.

The transfer characteristic at room temperature of FinFETs processed for sub-10 nm technologies could always be explained by solving Poisson equation throughout the channel – dielectric interface. Various methods for the MOSFET parameters estimation are proposed in the literature. In this paper, the electrical parameters extraction technique based on the Y-function methodology is reminded. Low frequency noise is presented considering three major noise sources: 1/ f noise associated to carrier trapping-detrapping in the gate oxide, channel carrier mobility fluctuations and generation-recombination noise related to traps located in the depletion zone of the device. Theory and methodology in order to identify the 1/ f noise mechanism and to have information of the process induced traps in the silicon film using the noise spectroscopy technique are revisited.

A key concern for resistive-switching random access memory (RRAM) is the read noise, due to the structural, chemical, and electrical modifications taking place at the localized current path, or conductive filament (CF). Read noise typically appears as a random telegraph noise (RTN), where the current randomly fluctuates between ON and OFF levels. This paper addresses RTN in RRAM, providing physical interpretations and models for the dependence on the programming and read conditions. First, we explain the RTN dependence on the compliance current during set transition in terms of the size-dependent depletion of carriers within the CF. Then, we discuss the bias dependence of the RTN switching times and amplitude, which can be explained by Joule heating and Poole-Frenkel barrier modifications arising from the electrostatics of the RTN fluctuating center.

This paper presents a noise analysis in the frequency domain using noise power spectral density and considering the undersampling process coming from the native readout circuit sequence of image sensors. It reveals aliasing effect impacting the noise level of the image sensor. Key parameters of the undersampling process, such as sampling period, power spectral density level, and type, are explored. Low-frequency noise and particularly 1/f noise impact show a major impact in results. The new calculation algorithm is implemented in MATLAB software. Two CMOS image sensor technologies are used to perform a comparison between noise estimation and measurements. This comparison shows a very good correlation between estimations and measurements.

In this paper the theoretical analysis of Low-frequency (LF) noise sources in Optoelectronic Coupled Devices (OCDs) is given and the relation between typical defects and LF noise (1/f noise, generationrecombination (g-r) nosie and burst noise) is described. According to LF noise sources of OCDs and device reliability estimation methods, a novel measurement system based on virtual instrument for OCDs is introduced and nV-level measurement precision can be achieved with the typical LF noise measurement system, which can be used to screen potential devices with excess noise and assess device relibility classifications. In this experiment, the top and bottom limitative thresholds were used to estimate the components parameters of the Power Spectrum Density (PSD) for estimating the reliability of OCDs by the average noise PSD for the 200 OCDs and the classification criterions of electronic components. The experimental results demonstrated that high reliability requirements can be satisfied.

A ballistic-electron transport-based semiconductor nanorectifier, also known as a ballistic rectifier, has been demonstrated to have an intrinsic zero threshold voltage. In this paper, we characterize its low-frequency noise properties and show that the zero-threshold property enables elimination of the flicker noise. As a potential terahertz detector, the ballistic rectifier exhibits a noise equivalent power in the range of commercially available, uncooled thermal terahertz detectors. The observed noise in the device at finite biases is modeled quantitatively. The derived simple formula reveals that the narrowest part of the electron channels has a dominant role in the device noise properties.

A detailed analysis of the noise spectrum of a semiconductor optical amplifier excited by an amplitude-modulated input signal is presented. This extends the well-established theory for the case of continuous-wave input signals and is relevant for various applications within optical signal processing. One important example is the analysis of noise in microwave photonic elements based on slow-light propagation in semiconductor optical amplifiers. Expressions for the noise spectra are derived and the dependence on important operation parameters, such as input power, modulation depth, and modulation frequency, is investigated and explained. We find several interesting modifications to the spectra compared with the continuous-wave case. In particular, the side-bands present in the input-signal lead via four-wave mixing effects to additional structure in the spectra as well as additional noise components.

We present an analysis of electrical noise in III-V heterojunction TFET (HTFET). Using numerical simulations, random telegraph noise (RTN) amplitude induced by a single charge trap is investigated with regard to trap location, electron band-to-band-generation rate, bias, and transistor size. It is found that HTFET RTN amplitude does not scale inversely with gate length and is governed by tunneling distance of carriers at source-channel junction. HTFET exhibits 40% less relative RTN amplitude at 0.3 V at gate lengths around 20 nm, over subthreshold Si-FinFET. RTN of HTFET at VGS=0 V is higher for a trap location at source-channel tunnel junction. To analyze flicker, shot, and thermal noise, we created transistor level Verilog-A-based electrical noise models. The results indicate HTFETs competitive noise performance in megahertz frequency range, over Si-FinFET. In the range 10 GHz or more with operating voltages exceeding 0.3 V, HTFET input noise is worse due to the dominance of shot noise. A differential amplifier with active load is used to examine the electrical noise performance at circuit level. We emphasize that high intrinsic gain, drive current, and output resistance of HTFET can be used to achieve superior mixed signal performance metrics in HTFET design over Si-FinFET design, at an improved electrical noise performance.

The phase noise of a ring oscillator can be obtained by multiplying its open-loop phase noise by a simple shaping function. The shaping function is computed using first principles and is applicable to both flicker-noise-induced and white-noise-induced phase noise, leading to compact equations for ring oscillators. It is also shown that flicker noise upconversion in ring oscillators is primarily a function of the total gate capacitance and inevitable regardless of the risetime and falltime symmetry. Two oscillator prototypes fabricated in 65-nm CMOS technology verify the validity of the results.

This letter presents the results of impulsive noise measurements in an indoor environment in the Medium Wave band. The studied channels are centered at 630, 675, 1035, 1620, 1720, and 1910 kHz. In this study, the noise generated when there is a main source of impulsive noise is measured in order to analyze different devices that originate impulses. Moreover, the appropriate parameters to characterize impulsive noise are described. As a result, reference values of impulsive noise parameters at the mentioned frequencies are given. Those measurements give answer to the request of the International Telecommunication Union, ITU, in ITU-R 214-4/3 question, which considers that it is essential to determine impulsive noise parameters and asks to obtain reference values.

For a 4T pixel-based CMOS image sensors (CIS) readout chain, with column-level amplification and CDS, we show that the input-referred total noise in a standard 65 nm process can be reduced to 0.37 e− rms . Based on transient noise simulation using Eldo, the deep sub-electron noise performance have been reached using only circuit techniques and optimal device choices. The simulation results have been favorably compared with analytical noise calculations. The shot noise associated to the gate tunneling current has been simulated and the possibility of photoelectron counting in this 65 nm process has been demonstrated.

Influences of magnetic field on the noise performance of double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si designed to operate within W-band (75–110 GHz) have been studied in this paper. The reverse biased DDR IMPATT structure under transverse magnetic field can be regarded as magnetic field tunable avalanche transit time (MAGTATT) device. The simulation results show that both the noise spectral density and noise measure of the device increase significantly while the device is kept in transverse magnetic field. This degradation of the noise performance of the device enhances when the magnitude of the magnetic field is increased. Therefore, in order to achieve the magnetic field tuning of the RF properties of DDR IMPATTs as reported earlier by the authors, the noise performance of the source has to be sacrificed in fair extent.

This paper examines the impact of quasi-ballistic transport (QBT) on bipolar transistor (BJT) intrinsic terminal current noise by analytically solving the general 3-D minority carrier noise transport equation using Hansen's nonhomogenous boundary conditions with extensions to include injection noise. Transistor noises are further expressed in Y-parameters, as was done in the widely used van Vliet model, with extra corrections accounting for QBT. For 10-nm base width of BJTs without base built-in field, while QBT is significant in affecting IC, Sic is shown to be less than but close to the classic 2qIC.