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Light-Matter Interactions at subwavelength-designed nanostructures have been the subject of intensive study in recent years. The realization of an ideal "blackbody" absorber is an emerging topic in nanophotonics and nanoplasmonics. An ideal black absorber is an object that harvests incoming light with near-unity efficiency. Based on their absorption spectral coverage, they are classified as narrow-band or broadband absorbers. This requirement can be achieved in bulky designs that have a thickness much larger than its light penetration depth as well as antireflective surface texturing.

Thinning the active layer’s thickness of the semiconductor down to a level comparable with the carriers’ diffusion length while keeping its absorption high is an ultimate goal to boost the performance of optoelectronic devices. Strong interference in multilayer structures is one of the promising and practical solutions owing to their simple and large-scale compatible fabrication route. These nanocavity designs not only provide near unity absorption, but they can also be designed in a way that a spectrally selective absorption response can be achieved. In this letter, we will demonstrate the functionality of a metal–insulator–semiconductor (MIS) cavity to obtain spectrally selective ultrathin photodetectors. To prove our theoretical and numerical findings, a 4-nm-thick amorphous silicon (a-Si)-based MIS cavity is designed, fabricated, and characterized. The experimental results show that the optimized cavity design can act as an efficient visible blind ultraviolet (UV) photodetector. The proposed design shows the responsivity values of 120 and 2.5 mA/W in the UV ( $\lambda =\textsf {350}$ nm) and visible ( $\lambda =\textsf {500}$ nm) regions, respectively.

In recent years, sub-wavelength metamaterials-based light perfect absorbers have been the subject of many studies. The most frequently utilized absorber configuration is based on nanostructured plasmonic metals. However, two main drawbacks were raised for this design architecture. One is the fabrication complexity and large scale incompatibility of these nano units. The other one is the inherent limitation of these common metals which mostly operate in the visible frequency range. Recently, strong interference effects in lithography-free planar multilayer designs have been proposed as a solution for tackling these drawbacks. In this paper, we reveal the extraordinary potential of bismuth (Bi) metal in achieving light perfect absorption in a planar design through a broad wavelength regime. For this aim, we adopted a modeling approach based on the transfer matrix method (TMM) to find the ideal conditions for light perfect absorption. According to the findings of our modeling and numerical simulations, it was demonstrated that the use of Bi in the metal-insulator-metal-insulator (MIMI) configuration can simultaneously provide two distinct functionalities; a narrow near unity reflection response and an ultra-broadband near perfect absorption. The reflection behavior can be employed to realize additive color filters in the visible range, while the ultra-broadband absorption response of the design can fully harvest solar irradiation in the visible and near infrared (NIR) ranges. The findings of this paper demonstrate the extraordinary potential of Bi metal for the design of deep sub-wavelength optical devices.

In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron beam lithography (EBL). Current–voltage, source-access resistance, small-signal, and two-tone measurements are performed to evaluate the linearity of devices. Contrary to conventional planar HEMTs, the intrinsic transconductance of laterally gated devices monotonically increases with increasing gate voltage, showing a similar behavior as junction field-effect transistors (FETs). The source-access resistance shows a polynomial increase with the drain current, which can be reduced by decreasing the filling ratio of the buried gates. Through the optimization of these two competing factors, i.e., intrinsic transconductance and the source-access resistance, flat transconductance with high linearity is achieved experimentally. The laterally gated structure shows flat transconductance and small-signal power gain over a larger span of gate voltage that is 2.5 times higher than a planar device. Moreover, 6.9-dB improvement in output intercept point (OIP3)/ ${P}_{\text {DC}}$ is achieved. This approach can be used to improve the linearity of AlGaN/GaN HEMTs at the device level.

Mid-infrared (MIR) plasmon-phonon features of heterostructures composing of a plasmonic anisotropic two-dimensional material (A2DM) on a hexagonal boron nitride (hBN) film are analyzed. We derive the exact dispersion relations of plasmon-phonons supported by the heterostructures and demonstrate the possibility of topological transitions of these modes within the second Reststrahlen band of hBN. The topological transitions lead to enhanced local density of plasmon-phonon states, which intensifies the spontaneous emission rate, if the thickness of the hBN layer is appropriately chosen. We also investigate a lateral junction formed by A2DM/hBN and A2DM, demonstrating that one can realize asymmetric guiding, beaming, and unidirectionality of the hybrid guided modes. Our findings demonstrate potential capabilities of the A2DM/hBN heterostructures for active tunable light–matter interactions and asymmetric in-plane polariton nanophotonics in the MIR range.

Being one-atom thick and tunable simultaneously, graphene plays the revolutionizing role in many areas. The focus of this paper is to investigate the modal characteristics of surface waves in structures with graphene in the far-infrared (far-IR) region. We discuss the effects exerted by substrate permittivity on propagation and localization characteristics of surface-plasmon-polaritons (SPPs) in single-layer graphene and theoretically investigate characteristics of the hybridized surface-phonon-plasmon-polaritons (SPPPs) in graphene/LiF/glass heterostructures. First, it is shown how high permittivity of substrate may improve characteristics of graphene SPPs. Next, the possibility of optimization for surface-phonon-polaritons (SPhPs) in waveguides based on LiF, a polar dielectric with a wide polaritonic gap (Reststrahlen band) and a wide range of permittivity variation, is demonstrated. Combining graphene and LiF in one heterostructure allows to keep the advantages of both, yielding tunable hybridized SPPPs which can be either forwardly or backwardly propagating. Owing to high permittivity of LiF below the gap, an almost 3.2-fold enhancement in the figure of merit (FoM), ratio of normalized propagation length to localization length of the modes, can be obtained for SPPPs at 5-9 THz, as compared with SPPs of graphene on conventional glass substrate. The enhancement is efficiently tunable by varying the chemical potential of graphene. SPPPs with characteristics which strongly differ inside and around the polaritonic gap are found. ispartof: Scientific Reports vol:8 issue:1 ispartof: location:England status: published

Date of Conference: 2-7 February 2019 Conference name: SPIE OPTO, 2019 A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude. The Society of Photo-Optical Instrumentation Engineers (SPIE)

Bi-tunable asymmetric light transmission (AT) and nearly perfect resonant absorption functionalities are achieved by a Lorentz-reciprocal metamaterial for the operation at the mid-infrared (MIR) wavelengths and transverse magnetic polarization. The bi-tunable metamaterial with bi-functional features and a total thickness of 1.8 mu m is based on an hBN/graphene/hBN heterostructure that is bounded by a Ge grating on the upper side and a hybrid VO2/Au grating on the lower side. Through analytical calculations, we first investigate how the dispersion characteristics of the high-beta hyperbolic phonon polaritons of hBN can be controlled and hybridized through the insulator (i-VO2) to metal (m-VO2) transition of VO2 in a bare hBN/VO2 heterostructure. Then, at the absence of graphene and owing to the support of the hybridized high-beta modes, a broad and efficient AT with forward-to-backward contrast exceeding 40% is obtained by numerical calculations for the i-VO2 case, as the first functionality of the structure. Moreover, it is found that for the m-VO2 case, the device is no longer transmittive and a nearly perfect resonant absorption response, as the second functionality, is observed for backward illumination. Finally, by introducing multilayer graphene into the structure and considering the intermediate states of VO2 in the calculations, the bi-tunable transmission and absorption characteristics of the device are investigated. We believe the designed metamaterial is well-suited for MIR optical diodes, sensors, and thermal emitters. (c) 2019 Optical Society of America

We theoretically prove in this paper that using planar multilayer graphene-hexagonal boron nitride (hBN) metamaterials (GhMMs) can yield ultrabroadband and high-contrast asymmetric transmission (AT) and asymmetric absorption (AA) of light. The AA and AT features are obtained in the far-infrared (FIR) and mid-infrared (MIR) regions for normally incident light with transverse magnetic polarization. Here, the GhMMs are integrated with two asymmetric gratings of Ge and are composed of alternating multilayers of graphene (11 multilayers) and hBN layers (10 layers). Moreover, the total subwavelength thickness of the hybrid structures is about 3 mu m, being less than half of the free-space wavelength up to nearly 50 THz. This approach-which is similar to the one introduced by Xu and Lezec [Nat. Commun. 5, 4141 (2014)] for a passive hyperbolic metamaterial operating in the visible range-is based on the excitation of high-beta modes of the GhMM with different transmission characteristics. In addition to being ultrabroadband and high-contrast, AT and AA features of the proposed GhMMs can be actively tuned by varying the chemical potential of graphene. Furthermore, it is shown that an on-off switching of AT factor at FIR and selective tunability at MIR frequencies can be obtained via varying mu. Due to its subwavelength and planar configuration and active operation, these multilayer graphene-hBN metamaterials with AT and AA characteristics hold promise for integration with compact optical systems operating in the MIR and FIR ranges and are suitable for applications such as optical diodes, sensors, and thermal emitters. Published under license by AIP Publishing.

In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in the gate lag performance of the design and a decrease by half in interface state density upon coating with two cycles of ALD Al2O3. DC characteristics such as current density, threshold voltage, and leakage currents were maintained. ALD Al2O3 passivation layers with thicknesses up to 10 nm were investigated. XPS analyses reveal that the first ALD cycles are sufficient to passivate GaN surface traps. This study demonstrates that efficient passivation can be achieved in atomic-scale with dimensions much thinner than commonly used bulk layers.

Achieving nearly perfect light absorption from the microwave to optical region utilizing metamaterials has begun to play a significant role in photonics and optoelectronics due to their vital applications in thermal emitters, thermal photovoltaics, photovoltaics, sensing, filtering, and photodetection. However, employing passive components in designing perfect absorbers based on metamaterials and photonic crystals imposes some limits on their spectral operation. In order to overcome those limits, extensive research has been conducted on utilizing different materials and mechanisms to obtain active metamaterial light absorbers. In this review paper, we investigate the recent progress in tunable and reconfigurable metamaterial light absorbers through reviewing different active materials and mechanisms, and we provide a perspective for their future development and applications. (C) 2019 Optical Society of America

In this article, a lithography-free multilayer based color filter is realized using a proper series connection of two cavities that shows relatively high efficiency, high color purity, and a wide view angle. The proposed structure is a metal-insulator-metal-insulator-semiconductor (MIMIS) design. To optimize the device performance, at the first step, transfer matrix method (TMM) modeling is utilized to find the right choices of materials for each layer. Simulations are carried out later on to optimize the geometries of the layers to obtain our desired colors. Finally, the optimized devices are fabricated and experimentally characterized to evaluate our modelling findings. The characterization results of the fabricated samples prove the successful formation of efficient and wide view angle color filters. Unlike previously reported FP based designs that act as a band-stop filter in reflection mode (absorbing a narrow frequency range and reflecting the rest of the spectrum), this design generates a specific color by reflecting a narrow spectral range and absorbing the rest of the spectrum. The findings of this work can be extended to other multilayer structures where an efficient connection of cavities in a tandem scheme can propose functionalities that cannot be realized with conventional FP resonators.

We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of 10−11 A/mm was achieved from normally-off MIS-HEMT device (Vth = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al2O3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment.

Colorimetric detection of target molecules with insensitivity to incident-light polarization has attracted considerable attention in recent years. This resulted from the ability to provide rapid output and reduced assay times as a result of color changes upon altering the environment that are easily distinguishable by the naked eye. In this paper, we propose a highly sensitive refractive-index sensor, utilizing the excitation of guided modes of a novel two-dimensional periodically modulated dielectric grating-waveguide structure. The optimized nanosensor can numerically excite guided-mode resonances with an ultranarrow linewidth (full width at half-maximum) of 0.58 nm. Sensitivity is numerically investigated by considering the deposition of dielectric layers on the structure. For a layer thickness of 30 nm, the maximum sensitivity reached as high as 110 nm/refractive index unit (RIU), resulting in a very high figure of merit of 190. The fabricated devices with 30 nm aluminum oxide and zinc oxide coatings achieved a maximum sensitivity of 235.2 nm/RIU with a linewidth of 19 nm. Colorimetric detection with polarization insensitivity is confirmed practically by a simple optical microscope. Samples with different coatings have been observed to have clearly distinct colors, while the color of each sample is nearly identical upon azimuthal rotation. Excellent agreement is obtained between the numerical and experimental results regarding the spectral position of the resonances and sensitivity. The proposed device is, therefore, highly promising in efficient, highly sensitive, almost lossless, and compact molecular diagnostics in the field of biomedicine with personalized, label-free, early point-of-care diagnosis and field analysis, drug detection, and environmental monitoring.

A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage ( $V_{\mathrm {th}} = + 3.59 ~\text {V}$ ) than those prepared with a GaN buffer ( $V_{\mathrm {th}} = +1.85 ~\text {V}$ ).

In this Letter, we demonstrate an ultra-broadband metamaterial absorber of unrivaled bandwidth (BW) using extraordinary optical response of bismuth (Bi), which is the material selected through our novel analysis. Based on our theoretical model, we investigate the maximum metal–insulator–metal (MIM) cavity BW, achievable by any metal with known n-k data. We show that an ideal metal in such structures should have a positive real permittivity part in the near-infrared (NIR) regime. Contrary to noble and lossy metals utilized by most research groups in the field, this requirement is satisfied only by Bi, whose data greatly adhere to the ideal material properties predicted by our analysis. A Bi nanodisc-based MIM resonator with an absorption above 0.9 in an ultra-broadband range of 800 nm–2390 nm is designed, fabricated, and characterized. To the best of our knowledge, this is the broadest absorption BW reported for a MIM cavity in the NIR with its upper-to-lower absorption edge ratio exceeding best contenders by more than 150%. According to the findings in this Letter, the use of proper materials and dimensions will lead to realization of deep sub-wavelength efficient optical devices.

In this paper, we propose an electrically tunable mid-infrared plasmonic-phononic absoiber with omnidirectional and polarization insensitive nearly perfect resonant absorption characteristics. The absorber consists of a graphene/hexagonal boron nitride (hBN)/graphene multilayer on top of a gold bottom reflector separated by a dielectric spacer. The graphene/hBN/graphene multilayer is patterned as a hole array in square lattice. We analytically and numerically prove that, due to the support of hybrid plasmon-phononpolaritons, nearly perfect multi-resonant absorption peaks with high quality factors are obtained both inside and outside of the Reststrahlen band of hBN. As a result of the hybridization of graphene plasmons with the hyperbolic phonon polaritons of hBN, the high quality resonant absorptions of the metamaterial are almost unaffected by decreasing the phenomenological electron relaxation time of graphene. Moreover, the obtained resonances can be effectively tuned in practice due to the continuity of the graphene layers in the hole array metamatenal. These features make the graphene-hBN metamaterial a skeptical design for practical purposes and mid-infrared multi-functional operations such as sensing. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, 125 μm gate width and 0.3 μm gate length in various gate structures were fabricated to achieve the desired frequency response with a robust, high yield, and repeatable process. The maximum drain current (IDS,max), maximum DC transconductance (gm), pinch-off voltage (Vth), current-gain cutoff frequency (fT), maximum oscillation frequency (fmax), and RF characteristics of the devices in terms of the small-signal gain and RF output power (Pout) at 8 GHz were investigated. The results showed that the output power is increased by 1 dB when the gate structure is changed from field plate to gamma gate. The Vth, gm, fT and fmax values are maximized when the thickness of the passivation layer between the gate foot and the gate head is minimized. It is shown that the IDS,max is decreased and Pout is increased when the gate recess etching process is performed.

In this paper, we propose a methodology to maximize the absorption bandwidth of a metal-insulator-metal (MIM) based absorber. The proposed structure is made of a Cr-Al2O3-Cr multilayer design. At the initial step, the optimum MIM planar design is fabricated and optically characterized. The results show absorption above 0.9 from 400 nm to 850 nm. Afterward, the transfer matrix method is used to find the optimal condition for the perfect light absorption in an ultra-broadband frequency range. This modeling approach predicts that changing the filling fraction of the top Cr layer can extend light absorption toward longer wavelengths. We experimentally proved that the use of proper top Cr thickness and annealing temperature leads to a nearly perfect light absorption from 400 nm to 1150 nm, which is much broader than that of a planar design. Therefore, while keeping the overall process lithography-free, the absorption functionality of the design can be significantly improved. The results presented here can serve as a beacon for future performance-enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity. (c) 2018 Chinese Laser Press