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The aim of the present study is to verify how alternations of annealing temperatures modify optical and micromorphological properties of n-ZnO/p-NZO and n-ZnO/p-NiO multilayers. As can be seen, the optical analysis of homojunctions and hetrojunction thin films shows a red shift by increasing annealing temperature which means that annealing can shift absorption edge coefficient to the lower values of energies. Also, the effective parameters on optical properties of homo- and hetrojunction thin films such as optical band gap, Urbach energy, steepness parameter, and skin depth have been studied by their transmittance spectra. Moreover, the micromorphology of n/p ZnO homo- and heterojunctions transparent diodes have been studied by atomic force microscopy in combination with modern image processing techniques. The nano scaled stereometric analysis provides significant insights into the influence of preparation process on surface texture geometry. According to the results extracted from AFM micrographs by MountainsMap® software, it is observed that Q/ITO/ZnO/NZO sample with 300 °C annealing temperature has the normal distribution of peaks with the highest percentage of isotropy. In addition, it is observed that Q/ITO/ZnO/NiO with 500 °C annealing temperature has the most regular topography.

Based on density functional theory (DFT), some optical properties of InN nanosheet, such as dielectric function, energy loss function, refractive index, reflectivity and absorption coefficient, have been calculated using the modified Becke–Johnson (mBJ) exchange–correlation potential and full potential-linearized augmented plane waves (FP-LAPW) method. The study of dielectric function show that optical properties of InN nanosheet are anisotropic and important energy range in the optical process is between low energies to 20 eV. The results indicate the plasmon energy of InN nanosheet occurs in the lower energy than bulk InN and in addition the plasmon energy in the in-plane direction is different from that perpendicular to the in-plane direction. The obtained optical gaps are 1.2 eV and 3.6 eV in perpendicular and parallel to [Formula: see text]-axis, respectively. Study of refractive index and optical reflectivity shows that the superluminal phenomena occur in the several energy ranges for the InN nanosheet and this nanosheet has high transparency in a wide energy range. The results propose that the InN nanosheet is a good candidate for the optical communications applications, optoelectronics devices and transparent coatings.

In this paper, some structural and electronic properties of V - and Co -doped single-walled ZnO nanotube (8,0), such as cohesive energy, geometric structure, density of states and band structure were investigated using first principles calculations. Our results showed that, first, the pure SWZnONT(8,0) can be stable and second, doped SWZnONTs(8,0) by V and Co atoms are more stable than pure SWZnONT(8,0) and TM impurities distort the structure of nanotubes around the TM impurities. The electronic results showed that pure SWZnONT(8,0) have a direct band gap about 1.443 eV and it is semiconductor. While with substituting V and Co instead of Zn in nanotube, a transition occurs from semiconducting to metallic and half-metallic states which these doped nanotubes as well as their magnetic properties are qualified for using in spintronic devices.