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The key parameters of vertical AlN Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated. The specific on-resistance (Ron,sp) decreased to 0.5 mΩ ⋅ cm2 and the breakdown voltage (VBR) decreased from 3.4 kV to 1.1 kV by changing the DLC from 1015 cm−3 to 3 × 1016 cm−3. The VBR increases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ ⋅ cm2 by increasing DLT from 4-μm to 11-μm. The VBR enhancement results from the increase of depletion region extension. The Baliga's figure of merit (BFOM) of 3.8 GW/cm2 was obtained in the structure of 11-μm DLT and 1016 cm−3 DLC without FP. When DLT or DLC is variable, the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate (FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS. [ABSTRACT FROM AUTHOR]