1. Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation.
- Author
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Jin, Jian-Yue, Liu, Jiarui, van der Heide, Paul A. W., and Chu, Wei-Kan
- Subjects
BORON ,ION-ion collisions - Abstract
We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (B[sub n][sup -], n=1-3) ion implantation with the same atomic boron dose and energy. This B[sub n][sup -] series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B[sub 1][sup -] implantation has less TED and less boron-interstitial clustering than B[sub 2][sup -] and B[sub 3][sup -] implantation. A boron trapping peak at the SiO[sub 2]/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2000
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