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Your search keyword '"Tanjyo, M."' showing total 2 results
Start Over Author "Tanjyo, M." Topic boron
2 results on '"Tanjyo, M."'

1. CLARIS G2: Development of Carbon Cluster Implantation.

Author

Nakashima, Y., Hamamoto, N., Umisedo, S., Koga, Y., Une, H., Asai, H., Maehara, N., Hashino, Y., Kawamura, Y., Hashimoto, M., Nagayama, T., Tanjyo, M., Onoda, H., Horsky, T. N., Hahto, S. K., and Sekar, K.

Subjects
ION implantation, CARBON, CLUSTER theory (Nuclear physics), BORON, MASS production, COMPLEMENTARY metal oxide semiconductors, EQUIPMENT & supplies
Abstract

Nissin's boron and carbon cluster ion implanter CLARIS G2 has been developed for the mass production of next generation CMOS devices. Development of boron cluster implant technique was presented at last IIT conference in 2008 [1]. In this paper, development of carbon cluster (C16Hx+ and C7Hx+) implant technique is described. Carbon cluster implantation has been well productized in terms of throughput, beam quality and lifetime. [ABSTRACT FROM AUTHOR]

Published
2011
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2. Scatter Defects and Hall Scattering Factor For The Mobility of Boron In Silicon.

Author

Prussin, S., Reyes, J., Qin, S., McTeer, A., Hu, Jeff Y., Onoda, H., Hamamoto, N., Nagayama, T., and Tanjyo, M.

Subjects
SCATTERING (Physics), DETERIORATION of materials, HALL effect, BORON, ION mobility spectroscopy, SILICON, HEAT treatment
Abstract

The mobility-carrier concentration relation for concentrations greater than 1E20 cm-3 B is shown to depend upon the concentration of scattering defects generated near the surface as a function of the doping and annealing process. This contradicts the Masetti model which assigns a fixed relation for each dopant species, without regard for the doping or annealing process used. [ABSTRACT FROM AUTHOR]

Published
2011
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