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We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n = hf/kT = 160 at f = 350 GHz T = 0.1 K, and current responsivity d I /d P = e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n = 1 and responsivity d I /d P = e/hf . In experiments, we approach intrinsic quantum efficiency up to n = 80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes.

A bolometer, which is based on a superconductor–insulator–normal metal–insulator–superconductor (SINIS) structure, integrated into a twin-slot antenna with a central frequency of 90 GHz, and connected with a superconducting microwave readout resonator, has been designed, fabricated, and experimentally studied. Such an elementary cell is designed for the multi-element array of a high-sensitive radioastronomic receiver, in which the readout from a great number of channels is performed by a single coaxial cable instead of separate wires and amplifier in each channel.

Bolometers based on the superconductor–insulator–normal-metal–insulator–superconductor (SINIS) structure with an absorber suspended above the substrate are developed, fabricated, and experimentally studied in the terahertz frequency range. In contrast to the previously studied bolometers with an absorber located directly on the substrate, the real bolometric mode of operation is achieved, i.e., there is more than one excited electron per quantum of electromagnetic radiation (the quantum efficiency is larger than 1). A quantum efficiency of fifteen electrons per quantum of radiation with a frequency of 350 GHz was achieved in the studied bolometers.

Two types arrays of annular half-wave and electrically small antennas with typical sizes of the elements corresponding to 1/10 of the wavelength at SubTHz band with integrated superconductor–insulator–normal metal–insulator–superconductor (SINIS) bolometers have been developed, fabricated and experimentally studied. We performed numerical modeling of the full structure and use additional reference channels in experimental studies to enhance the accuracy of the spectral response estimations of receiving arrays. In experiments three reference channels were used for normalization of the spectral response: a pyroelectric detector outside the cryostat, and two cold channels—a RuO2 bolometer and on-chip thermometer comprising series array of NIS-junctions.

For improving the dynamic range and sensitivity at high power load, we have integrated superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with a frequency selective surface (FSS)-based distributed absorber formed by a series and parallel array consisting of 25 annular antenna elements, each containing two SINIS bolometers. By using a design with 50 bolometers, we reduce incident power load on each bolometer, increase sensitivity and saturation power which is important for ground-based and balloon-borne telescopes with high background power loads. Our main detector pixel is optimized for a frequency band centered at 345GHz. The detectors are matched to incoming telescope beam by a back-to-back horn with a back reflector. Such a configuration improves both the efficiency and the bandwidth of the receiver. Measured voltage responsivity approaches 210(9) VW with an amplifier-limited voltage noise of 20nVHz(12), which corresponds to a NEP 10(-17) WHz(12). The linear voltage response for incoming power is observed for absorbed power of about 5 pW. The current responsivity for parallel array is 210(4) AW and the shot noise limited intrinsic noise equivalent power is NEP 510(-18)WHz(12). The noise equivalent temperature difference is NETD 100 KHz(12) at 2.7-K background radiation temperature.

—Arrays of planar annular antennas in the 345 GHz range with integrated superconductor–insulator–normal metal–insulator–superconductor (SINIS) bolometers have been developed, fabricated, and experimentally investigated. To increase the absorption efficiency, the source signal was matched with the array using a back-to-back horn and a counter-reflector. The efficiency of the receiving structure was studied depending on the direction of irradiation—through the substrate and from the antenna—as well as on the thickness of the substrate. The methods for normalizing a received signal using a reference channel outside and inside a cryostat is described. The best results were obtained by irradiating the array from the antenna with a substrate thickness equivalent to a quarter wavelength in the dielectric and sputtering of the rear side with a gold film (counterreflector). The effective matching band in the main range was more than 50 GHz; the volt–watt sensitivity reaches 109 V/W.

Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator–superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with two-step direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V2Δ) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels.

Microwave detectors of the Metal-Insulator-Metal-Insulator-Metal (MIMIM) structure and the Superconductor-Insulator-Metal-Insulator-Superconductor (SIMIS) structure have been designed, fabricated and investigated. The difference of such samples was in external electrodes, MIMIM uses copper external electrodes, while SIMIS uses aluminum. Identical in dimensions MIMIM and SIMIS samples have been fabricated and experimentally studied in the temperature range of 0.1–2.7 K. Voltage and current response were measured at 300 GHz external irradiation using Backward Wave Oscillator (BWO). According to our estimates, the MIMIM current responsivity is 1.1·103 A/W in the case of a photon response and 4·104 A/W in the case of a bolometric response. The estimated noise equivalent power is in the range 2.5·10 18 W/ √ Hz to 1.2·10−19 W/√Hz.

We fabricated and experimentally studied a wideband metamaterial comprising a 2D array of annular antennas with Superconductor-Insulator-Normal metal-Insulator-Superconductor (SINIS) bolometers. The annular antenna array metamaterial was designed for a frequency range of 300–450 GHz and consists of periodically arranged electrically small rings, each containing two or four SINIS bolometers connected in series or parallel. These periodic structures with a unit cell size of about one-tenth of a wavelength act as a distributed absorber and receive two orthogonal polarizations. The unit’s small cell size provides a higher density of bolometers and therefore increases the bandwidth and the dynamic range of a single pixel. Theoretical estimates at a central frequency of 345 GHz yield absorption efficiencies of over 80% of the incident RF power within the 300–450 GHz frequency range. The average absorption by the metamaterial matrix in the given frequency band is at least twice as high in comparison to the half-wave circle matrix. We measured the optical response at sample temperatures as low as 100 mK using a quasi-optical setup that consisted of an immersion sapphire lens, bandpass mesh filters, and a variable temperature cryogenic blackbody radiation source. The measured series array voltage responsivity was 1.3 × 109 V/W for radiation temperatures ranging from 2 K to 7.5 K. The current responsivity for the parallel array was 2.4 × 104 A/W at a bath temperature of 100 mK. The spectral response was measured in a 240–370 GHz range with a Backward Wave Oscillator radiation source. The measured equivalent temperature sensitivity could be reduced to 100 μK/Hz1/2 at a 2.7 K radiation temperature level, a value that is suitable for anisotropy measurements in cosmic microwave background radiation.

We present experimental results on the testing of cold-electron bolometer (CEB) detectors comprised of a thin Ti film absorber and two SIN junctions integrated with a planar antenna. The CEB performance was tested in a He 3 sorption cryostat HELIOX-AC-V at bath temperatures of 280‐305 mK. The optical response was measured using the hot/cold load method by flipping a Cu reflector opposite a blackbody surface inside a 3 K shield and using a thermal source with variable temperature. In the first experiment, the detector chip was mounted in an optical sample-holder whose aperture was switched towards or away from a blackbody source changing the incident radiation temperature from 3 K to 270 mK. As a result, we measured the optical response to a 3 K=270 mK radiation temperature change. The measured voltage response value for the detector integrated in a double-dipole antenna was 1VoutD 120 V. This corresponds to a noise equivalent power of NEPD Vn=.dV=dP/D 3:5 10 17 W Hz 1=2 , where dV=dP is the voltage to power response obtained from the incoming power estimation based on the Planck formula. (Some figures may appear in colour only in the online journal)