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Hydrogenation is an effective approach to improve the performance of photocatalysts within defect engineering methods. The mechanism of hydrogenation and synergetic effects between hydrogen atoms and local electronic structures, however, remain unclear due to the limits of available photocatalytic systems and technical barriers to observation and measurement. Here, we utilize oxygen vacancies as residential sites to host hydrogen atoms in a layered bismuth oxychloride material containing defects. It is confirmed theoretically and experimentally that the hydrogen atoms interact with the vacancies and surrounding atoms, which promotes the separati30on and transfer processes of photo-generated carriers via the resulting band structure. The efficiency of catalytic activity and selectivity of defective bismuth oxychloride regarding nitric oxide oxidation has been improved. This work clearly reveals the role of hydrogen atoms in defective crystalline materials and provides a promising way to design catalytic materials with controllable defect engineering. Hydrogenated BiOCl shows high performance as a semiconductor photocatalyst, but the mechanism and synergetic effects of hydrogenation are hard to study. Here interactions of oxygen vacancies and hydrogen atoms in BiOCl nanosheets show a modulation of energy dispersion, which leads to both improvements in charge separation and photocatalytic activity. [ABSTRACT FROM AUTHOR]

GaAs1 − xBix alloys attract significant interest due to their potentiality for several applications, including solar cells. Recent experiments link the crucial optical properties of these alloys to Bi clustering at certain Bi compositions. Using ab initio calculations, we show that there is no thermodynamical driving force for the formation of small GaBi clusters incorporating As substitutional sites. However, the Ga vacancies should gather Bi atoms leading to small Bi clusters, and the Ga vacancies can act as nucleation centers for phase separation. The formation energy of the GaAs1 − xBix with respect to GaAs and GaBi shows a maximum at intermediate Bi concentrations. Thermodynamics and kinetics of the GaAs1 − xBix film growth is discussed. High Bi solubility is obtained, if the Bi atoms on the energetically favorable atom positions in the subsurface layer are relatively frozen. The Ga vacancy concentration may be increased by the incorporation of Bi. The Bi atoms can also prevent the out diffusion of Ga vacancies. [ABSTRACT FROM AUTHOR]