1. Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition.
- Author
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Barnes, J-P., Petford-Long, A. K., Suárez-Garcıa, A., and Serna, R.
- Subjects
BISMUTH ,PULSED laser deposition ,ALUMINUM oxide ,ELECTRONS - Abstract
The implantation of bismuth during pulsed laser deposition (PLD) has been directly observed and investigated. Bi was deposited on amorphous aluminum oxide (Al[SUB2]O[SUB3]) and the laser energy density on the Bi target was varied by one order of magnitude (0.4 to 5 J cm[SUP-2]). Cross-sectional transmission electron micrographs reveal that, for laser energy densities above 2 J cm[SUP-2], in addition to the formation of Bi nanocrystals, there is a dark and apparently continuous layer in the Al[SUB2]O[SUB3] underneath them. From previous velocity measurements, the kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm[SUP-2] has been estimated to be around 200 eV, which gives a calculated implantation range of 1.8 nm in Al[SUB2]O[SUB3]. This is in good agreement with the position of the Bi-rich layer. [ABSTRACT FROM AUTHOR]
- Published
- 2003
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