1. Electroluminescence analysis of VOC degradation of individual subcell in GaInP/GaAs/Ge space solar cells irradiated by 1.0 MeV electrons
- Author
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Jun Liu, Rong Wang, Jun-Ling Wang, Gang Yan, Rui Wu, and Yan-yu Liu
- Subjects
Materials science ,business.industry ,Biophysics ,02 engineering and technology ,General Chemistry ,Electron ,Electroluminescence ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Penning trap ,01 natural sciences ,Biochemistry ,Fluence ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electron beam processing ,Degradation (geology) ,Optoelectronics ,Irradiation ,0210 nano-technology ,business ,Recombination - Abstract
The open-circuit voltage (VOC) degradation for individual subcell in 1.0 MeV electrons-irradiated GaInP/GaAs/Ge solar cells has been analyzed using electroluminescence (EL) measurements. By using the relationship between VOC degradation and electron fluence, the capture cross section of the defects induced by electron irradiation in individual subcells were determined. Furthermore, by comparing the thermal activation energy and capture cross section, a defect located at Ev+0.55 eV styled H2 hole trap is nonradiative recombination centre in GaInP subcell, a defect located at EC-0.96 eV styled E5 electron trap is nonradiative recombination centre in GaAs subcell, and a defect located at EC-0.38 eV styled E-center electron trap is nonradiative recombination centre in Ge subcell.
- Published
- 2020