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Electrical duobinary modulation is considered as a promising way to realize high capacity because of the low bandwidth requirement on the optical/electrical components and high tolerance toward chromatic dispersion. In this paper, we demonstrate a 100 Gb/s electrical duobinary transmission over 2 km standard single-mode fiber reaching a bit error rate under 7% HD-FEC threshold with the use of PRBS7. This link is tested in real-time without any form of digital signal processing. In-house developed SiGe BiCMOS transmitter and receiver ICs are used to drive an electroabsorption modulated laser and decode the received signal from a PIN-photodiode. The performance of 50 and 70 Gb/s nonreturn-to-zero and electrical duobinary transmission are investigated for comparison.

We demonstrate DSP-free and real-time NRZ transmission at 50Gb/s over 15km SSMF, 60Gb/s over 5km SSMF and 64Gb/s back-to-back using a directly modulated 1326nm short cavity VCSEL supported by a SiGe BiCMOS 6-tap feedforward equalizer.

A power amplifier (PA) with a saturated output power of 24.1 dBm at 32 GHz, fabricated in a 250 nm SiGe BiCMOS technology, is presented. This PA operates in Class AB and achieves a power-added efficiency (PAE) of 7.2% with a gain of approximately 25 dB and a die area of 1.70 mm2. A differential cascode output stage with a self-shielded balun is used, allowing to maximize the output voltage swing. The driver stage consists of translinear loops to bias and linearize the output stage while a transformer-type power combiner is implemented to achieve broadband on-chip power combination. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:718–722, 2015

A BiCMOS chip-based real-time intensity modulation/direct detection spatial division multiplexing system is experimentally demonstrated for both optical interconnects. 100 Gbps/lambda/core electrical duobinary (EDB) transmission over 1 km 7-core multicore fiber (MCF) is carried out, achieving KP4 forward error correction (FEC) limit (BER < 2E-4). Using optical dispersion compensation, 7 x 100 Gbps/lambda/core transmission of both non-retunito-zero (NRZ) and EDB signals over 10 km MCF transmission is achieved with BER lower than 7% overhead hard-decision FEC limit (BER < 3.8E-3). The integrated low complexity transceiver IC and analog signal processing approach make such a system highly attractive for the high-speed intra-datacenter interconnects. (C) 2018 Optical Society of America under the terms oldie OSA open Access Publishing Agreement.

High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electro-optic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signal-conditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 x 10(-5). This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 x 10(-3)) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform. (C) 2017 Optical Society of America

In this paper a high gain, high power output stage designed in a 250nm SiGe BiCMOS technology is presented. The used topology together with a discussion on the stability of the output stage is explained in detail. In order to increase the gain of the output stage and thus increases the attainable power added efficiency (PAE), positive feedback is used. Furthermore a formula predicting the input impedance of a common base transistor at high frequencies is deducted which explains and predicts the magnitude of the feedback mechanism. The output stage achieves a peak gain of 14.4dB at 31GHz with a maximum output power of 22dBm.

A BiCMOS chip-based real-time IM/DD spatial division multiplexing system is experimentally demonstrated for short-reach communications. 100 Gbps/λ/core NRZ and EDB transmission is achieved below 7%-overhead HD-FEC limit after 10km 7-core fiber with optical dispersion compensation.