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A flexure-based four-point mechanical wafer bending setup is used to apply large uniaxial tensile stress (up to 1.2 GPa) on industrial nMOSFETs with 0 to ∼700 MPa of process-induced stress. This provides the highest uniaxial channel stress to date at ∼1.5 GPa. The stress altered drain-current is measured for long and short (50–140 nm) devices and the extracted π-coefficients are observed to be approximately constant for stresses up to ∼1.5 GPa. For short devices, this trend is seen only after correcting for the significant degradation in the π-coefficients observed due to parasitic source/drain series resistances ( Rs/d). [ABSTRACT FROM AUTHOR]