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The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. In this study, randomly oriented Bi3.25La0.75Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates using the sol–gel method, and SEM observations revealed rod-like grains in all thin films. The investigation delved into the correlation between dielectric and ferroelectric properties with thin film thickness. The thin film exhibited an increased remanent polarization and a reduced coercive electric field. Additionally, the ferroelectric domain structure was scrutinized through PFM, and the resistor properties of the BLT4 thin film were studied, which shows the potential of BLT thin films in non-volatile memory and memristor. [ABSTRACT FROM AUTHOR]

Dielectric capacitors have received increasing attention due to their high power density. The Bi-based Aurivillius phase compound Bi3.25La0.75Ti3O12 (BLT) is considered a potential material in the field of energy storage due to its excellent ferroelectric properties and good fatigue resistance, and temperature stability. In this paper, 0.4Bi0.5Na0.5TiO3-0.6Bi3.25La0.75Ti3O12 (0.4NBT4BNT-0.6BLT)-thin films were prepared on Pt/Ti/SiO2/Si substrates with the sol-gel method. The addition of BNT destroys the long-range ferroelectric order of BLT and forms nanodomains. By increasing the BNT content, the BLT is transformed from a ferroelectric state to a relaxed state, and its application in the field of energy storage is realized. The recoverable energy density is 42.41 J/cm3, and the recoverable energy storage density is relatively stable in the range of 25–200 °C with good thermal stability. The energy storage efficiency is 75.32% at ~2663 kV/cm. The leakage current density at 300 kV/cm is 1.06 × 10−9 A/cm2. [ABSTRACT FROM AUTHOR]