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This work presents a parasitic wide band compact planar antenna for 5 G mm-wave applications. Besides having high bandwidth (5.22 GHz), the prospective antenna provides an enhanced gain of 5.23dBi which is achieved due to the reflector elements used in the design. The radiating element has a small planar rectangular geometry, with optimised dimensions of 0.342 λ0 × 0.199 λ0 × 0.005 λ0 at 28 GHz frequency of interest and has been designed and fabricated on a substrate of Rogers-RT/Duroid 5800 having a thickness of 0.147λ0 with loss-tangent of 9 × 10−4 and permittivity of 2.2. The proposed antenna operates in the frequency range of 24.71 to 29.93 GHz which falls under the n257 and n258 NR operating band of the FR2 band as defined by ITU for the millimetre wave 5 G spectrum. It is also affirmed in the study that the impedance bandwidth can be tuned by controlling the coupling gap between the radiating and parasitic patches. The measured results of the fabricated prototype of the patch are compared with the simulated results and the two results are in good agreement with each other. The pursuance of the proposed design in terms of gain, efficiency, radiation pattern, and wide bandwidth, qualifies the prototype as a viable option for mm-wave communication. [ABSTRACT FROM AUTHOR]

In this work, a novel multiple input multiple output (MIMO) array antenna system with a large bandwidth and high gain has been simulated, analyzed, fabricated, and measured. The proposed antenna is structured in 2 × 4 patch configuration along with a cross shaped ground plane loaded with four square and one circular shaped defect. The projected antenna occupies a total size of 4 3. 6 1 1 × 4 3. 6 1 1 × 0. 4 2 mm 3 . Several slots in an elliptic form have been added to the patches to achieve the required results in terms of wide bandwidth and high gain. The MIMO antenna array is fabricated and experimentally tested to confirm the simulation results. The suggested MIMO array antenna offers an impedance bandwidth of 22 GHz covering 22–44 GHz wide range of frequencies with a high peak gain of 17 dBi at 38 GHz. The designed MIMO antenna offers superior diversity performance and it supports several 5G NR bands n257/n258/n259/n260/n261 in the mm-wave spectrum. The suggested MIMO antenna supports 5G application bands that are deployed in UK, USA, China, Europe, Canada, India, and Europe. [ABSTRACT FROM AUTHOR]

Summary: This research suggests a compact uniplanar multiple‐input multiple‐output (MIMO) with four ports for n79/n46/millimeter‐wave (mm‐wave) applications. The size of the quad MIMO is only 30 × 30 × 0.8 mm3. MIMO system consists of four identical Z‐shaped radiators and common ground on the same plane and no decoupling structures are used for isolation. The system covers the bandwidth of 1.9 GHz (4.4–6.3 GHz) with a mid‐frequency of 5.6 GHz and also covers the high‐band frequencies ranging from 18 to 30 GHz with a bandwidth of 12 GHz. The suggested quad MIMO is fabricated on an FR‐4 board, and the measured outcomes are well in line with the simulated results. An isolation value of −11 dB has been achieved for mid‐band frequency and −24 dB has been attained for mm‐wave bands. Through the value of DG = 10 dB, ECC < 0.07, TARC < −3 dB, MEG < −5 dB, and the ratio of MEG = 1 dB, uniplanar quad MIMO shows acceptable MIMO diversity performance. The entire system was evaluated for the users' hand specific absorption rate (SAR) impacts and is within the limits. After the complete analysis of the miniature quad MIMO antenna, an 8‐port, and a 16‐port uniplanar MIMO are simulated for smartphone‐sized dielectric substrates and the performances were examined. The suggested MIMO system provides an efficient single‐layer MIMO antenna to 5G smartphones with high bandwidth and low SAR. The proposed quad MIMO systems are suitable for both the sub‐6 GHz band and the mm‐wave band. [ABSTRACT FROM AUTHOR]

In this paper, mm–wave low cost single and multiple input and multiple output (MIMO) planar microstrip antenna suitable for futuristic K–(18–26.5GHz), K a –band (26.5–40GHz) and local multipoint distribution systems (LMDS) applications is presented. The proposed structure achieves impedance bandwidth of 22.77 GHz (17.23–40GHz) with a peak gain of 13.69 dBi that notably covers the LMDS modern wireless communication application requirement. This achieves 5 dBi gain-bandwidth of 9.07 GHz (26.77–35.85GHz) and 17 GHz (19–36GHz) for single element and MIMO antenna with four elements in cascaded form respectively. The improvement in gain and impedance bandwidth is augmented after exciting multiple resonances of antenna by etching of two 3-armed H-shaped slots (3-AHSS) and inverted T-shaped slots (ITSS) symmetrically in the patch. With these etchings the copper losses and vertical components of current are controlled. The fabricated prototype of size 37 × 15 m m 2 is connected through a mm–wave supporting frequency connector of 2.92 mm and 50 Ω coaxial type to Vector Network Analyzer (VNA) Bench of modal number Rohde and Schwarz (ZNB–40) for measurement of performance parameters and it is found to be in good promise with simulated results. [ABSTRACT FROM AUTHOR]

Fifth-generation technology is not fully deployed in the world wireless communication till date. Millimeter-wave (mm-wave) band needs to be used due to plenty of available bandwidth and for achieving the goals of 5G such as greater data rate, ultra-high-speed video broadcasting, low latency services, and many more. Wideband antenna is required for 5G applications to access the high speed, low latency Internet services, and ultra-high-definition video streaming. Various bandwidth enhancement techniques have been reported by the researchers for microstrip antennas operating at microwave bands. High link losses, small wavelength, limited coverage, and environmental losses are the major challenges of mm-wave band. To mitigate these issues and satisfy 5G standard, an antenna with wide bandwidth, high gain, narrow steerable beam, high isolation, low side lobe levels, and multiband characteristics is required. Modifications in conventional antenna design techniques are required to achieve broader bandwidth along with stable radiation characteristics, improved gain, and low side lobe levels at mm-wave frequencies. This paper presents the survey of various bandwidth enhancement techniques which has been used in the 5G antennas designed by researchers. Reviews of some wideband 5G antennas with their performance comparisons are also discussed. [ABSTRACT FROM AUTHOR]

This paper investigates a heterogeneous cellular network (HCN) topology, where multiple sub-6 GHz bands are available for access and device-to-device (D2D) links with the full-duplex (FD) mode, and an integrated millimeter-wave (mm-wave) band is added to the D2D links’ sub-channel resource options. D2D links share spectrum resources of cellular users or dedicated mm-wave sub-channel. Densely deployed small cells scenario provides an ideal platform to implement mm-wave, FD and D2D communications. With large bandwidths available, mm-wave has the potential to meet the expected extreme data rate demands. Leveraging highly directional beamforming, severe transmission loss and the blockage phenomenon of mm-wave can be alleviated. Theoretically, FD communications can double the spectral efficiency due to bi-directional communications with the same spectral and temporal resources. However, such benefit comes at the cost of residual self-interference (RSI). Multi-user interference (MUI) and RSI among network uplink, downlink and D2D links are the main challenges. In the paper, we formulate an optimization problem for FD access and D2D links sub-channel allocation underlaying HCNs combining sub-6 GHz and mm-wave bands to make the system transmission rate maximized. Then, a scheme based on the coalition formation game is proposed to deal with this challenging NP-complete optimization. Finally, performance evaluation investigates the suitable conditions for FD and HD operations. Under different network parameter settings, we quantify associated performance of proposed scheme. [ABSTRACT FROM AUTHOR]

A wideband high‐gain mm‐Wave antenna array operating in Ka‐band is reported. The antenna element consists of an antipodal Vivaldi antenna (AVA) with plated through vias on the edges of the radiating arms, which is utilized to eliminate the harmful gap resonance due to the electrically discontinuity. A modified wideband 8‐way substrate integrated waveguide (SIW) power divider is proposed to feed the linear array. In addition, in order to enhance antenna gain, a stacked dielectric superstrate is employed, which achieves 2.3 dBi average gain improvement over 25‐40 GHz. The proposed structure provides superior bandwidth of 25.4‐40 GHz with S11 < −9.5 dB (corresponding to VSWR < 2). The modified SIW power divider, 1 × 8 AVA array and the dielectric superstrate are designed and fabricated, resulting in a wideband and high‐gain structure as compared to other SIW‐fed antennas. A prototype is experimentally verified. The measured results show that the impedance bandwidth ranges from 25.37 to 39.48 GHz (S11 < −9.6 dB, relative bandwidth of 43%). The measured gain varies from 15.5 to 18.5 dBi in the frequency range with an average gain of 16.6 dBi. [ABSTRACT FROM AUTHOR]

In this paper, we design a low noise amplifier to support ka-band satellite communication systems using 65-nm RFCMOS process. The proposed low noise amplifier is designed with high-gain mode and low-gain mode, and is designed to control the gain according to the magnitude of the input signal. In order to reduce the power consumption, the supply voltage of the entire circuit is limited to 1 V or less. We proposed the gain control circuit that consists of the inverter structure. The 3D EM simulator is used to reduce the size of the circuit. The size of the designed amplifier including pad is 0.33mm2. The fabricated amplifier has a -7 dB gain control range in 3 dB bandwidth and the reflection coefficient is less than -6 dB in high gain mode and less than -15 dB in low gain mode. [ABSTRACT FROM AUTHOR]

We review advances in low-temperature detector (LTD) arrays for cosmic microwave background (CMB) polarization experiments, with a particular emphasis on imaging arrays. We briefly motivate the science case, which has spurred a large number of independent experimental efforts. We describe the challenges associated with CMB polarization measurements, and how these challenges impact LTD design. Key aspects of an ideal CMB polarization imaging array are developed and compared to the current state of the art. These aspects include dual-polarization sensitivity, background-limited detection over a 10:1 bandwidth ratio, and frequency-independent angular responses. Although existing technology lacks all of this capability, today’s CMB imaging arrays achieve many of these ideals and are highly advanced superconducting integrated circuits. Deployed arrays map the sky with pixels that contain elements for beam formation, polarization diplexing, passband definition in multiple frequency channels, and bolometric sensing. Several detector architectures are presented. We comment on the implementation of both transition-edge sensor bolometers and microwave kinetic inductance detectors for CMB applications. Lastly, we discuss fabrication capability in the context of next-generation instruments that call for ∼106 sensors. [ABSTRACT FROM AUTHOR]

Abstract: In this work, a 4G/5G multiple‐input multiple‐output (MIMO) antenna system is presented for smart phone applications. The 4G antenna operates from 1900 to 3212 MHz and 3517 to 3712 MHz with 1312 (69%) and 195 (5.5%) MHz measured bandwidths, respectively. The 5G antenna covers 25.7–30.50 GHz band with 4.8 GHz (18.7%) measured bandwidth. The 4G MIMO antenna system is based on 4‐element wideband monopoles, while the 5G one is based on 2‐element linear connected arrays (LCA). Four slots are etched to improve the isolation between the 4G MIMO antenna elements and then a 4 × 1 power divider/combiner is used to excite two of these slots to act as a LCA at mm‐waves. The concept of dual function ground slots is very useful to implement 4G and 5G MIMO antenna systems on the single substrate. The proposed design is fabricated on RO4350B substrate with a height of 0.76 mm and dielectric constant of 3.5. The overall size of the substrate is 115 × 65 × 0.76 mm3. The integrated wideband 4G/5G antenna system is a compact, low profile, and suitable for future smart phone applications. Isolation obtained was at least 15 dB and the envelope correlation coefficient (ECC) values did not exceed 0.16 between all elements. [ABSTRACT FROM AUTHOR]

This paper presents an overview of the research work currently being performed within the frame of project DAAB and its successor DAAB-TX towards the integration of ultra-wideband transceivers operating at mm-wave frequencies and capable of data rates up to 100 Gbits-1. Two basic systemarchitectures are being considered: integrating a broadband antenna with a distributed amplifier and integrate antennas centered at adjacent frequencies with broadband active combiners or dividers. The paper discusses in detail the design of such systems and their components, fromthe distributed amplifiers and combiners, to the broadband silicon antennas and their single-chip integration. All components are designed for fabrication in a commercially available SiGe:C BiCMOS technology. The presented results represent the state of the art in their respective areas: 170 GHz is the highest reported bandwidth for distributed amplifiers integrated in Silicon; 89 GHz is the widest reported bandwidth for integrated-system antennas; the simulated performance of the two antenna integrated receiver spans 105 GHz centered at 148GHz, which would improve the state of the art by a factor in excess of 4 even against III-V implementations, if confirmed by measurements. [ABSTRACT FROM AUTHOR]

This paper presents simulation results for a sliding-IF SiGe E-band transmitter circuit for the 81-86 GHz E-band. The circuit was designed in a SiGe process with f = 200 GHz and uses a supply of 1.5 V. The low supply voltage eliminates the need for a dedicated transmitter voltage regulator. The carrier generation is based on a 28 GHz quadrature voltage oscillator (QVCO). Upconversion to 84 GHz is performed by first mixing with the QVCO signals, converting the signal from baseband to 28 GHz, and then mixing it with the 56 GHz QVCO second harmonic, present at the emitter nodes of the QVCO core devices. The second mixer is connected to a three-stage power amplifier utilizing capacitive cross-coupling to increase the gain, providing a saturated output power of +14 dBm with a 1 dB output compression point of +11 dBm. E-band radio links using higher order modulation, e.g. 64 QAM, are sensitive to I/Q phase errors. The presented design is based on a 28 GHz QVCO, the lower frequency reducing the phase error due to mismatch in active and passive devices. The I/Q mismatch can be further reduced by adjusting varactors connected to each QVCO output. The analog performance of the transmitter is based on ADS Momentum models of all inductors and transformers, and layout parasitic extracted views of the active parts. For the simulations with a 16 QAM modulated baseband input signal, however, the Momentum models were replaced with lumped equivalent models to ease simulator convergence. Constellation diagrams and error vector magnitude (EVM) were calculated in MATLAB using data from transient simulations. The EVM dependency on QVCO phase noise, I/Q imbalance and PA compression has been analyzed. For an average output power of 7.5 dBm, the design achieves 7.2% EVM for a 16 QAM signal with 1 GHz bandwidth. The current consumption of the transmitter, including the PA, equals 131 mA from a 1.5 V supply. [ABSTRACT FROM AUTHOR]

A low-noise (LNA) amplifier that combines transformer-neutralization with bandwidth enhancement is introduced to enable a compact design capable of operating from a widely scalable supply voltage. A supply-voltage scalable 17-29 GHz ultra-wideband (UWB) multi-stage LNA prototype employing a single transistor between V and ground in all stages, and using the aforementioned techniques, is fabricated in 130 nm CMOS. The LNA achieves 15.4 dB (18 dB) peak gain, 5.5 dB (4.7 dB) minimum NF and −12 dBm (−11 dBm) worst case IIP3 while consuming 6 mW (15 mW) power while operating with a 0.6 V (1.2 V) supply voltage. A 17-27 GHz quadrature receiver prototype employing a modified version of this LNA is also fabricated, with potential applications in wireless sensor and vehicular radar applications. The receiver achieves 22.2 dB (25.4 dB) of peak conversion gain, 8.7 dB (5.7 dB) minimum NF and −17 dBm (−15 dBm) worst case IIP3 while consuming 10.2 mW (24 mW) power from a 0.6 V (1.2 V) V. [ABSTRACT FROM AUTHOR]

This paper studies the maximum Baud rate and the scalability to the W-Band of the mm-wave power-DAC transmitter architecture. Proof-of-concept implementations of a single DAC lane and of a 2×2 IQ transmitter array are reported in 45 nm SOI CMOS. The DAC cell achieved 29 GHz OOK and 29 GHz BPSK modulation bandwidth and 2×44 Gb/s BPSK+OOK data rates for carriers in the 100–110 GHz range. The corresponding energy efficiency is 7.5 pJ/bit at an output power of 12 dBm. For the 2×2 IQ array, an EVM of 9.0% is estimated over a 12 GHz bandwidth, from large signal power and S-parameter phase measurements. [ABSTRACT FROM AUTHOR]

Abstract: We proposed a fractal-based dual-mode bandpass filter (BPF) using a standard CMOS process for application of 60GHz WirelessHD system. We first investigated the effect of coupling feedlines of I/O ports set at different layer of M3 and M4 layer on the transmission loss of the resonator, and verified the nature coupling of fractal-based dual-mode filter. Experimental result shows that the designed filter with a fractional-bandwidth (FBW) of 23%, an insertion loss about 7dB and return loss larger than 10dB. Additionally, two transmission zeros are appeared at the passband edges, thus much improve the selectivity of the proposed CMOS BPF. The result indicates that fractal-based structure is feasible and can meet the requirement in the mm-wave application. [Copyright &y& Elsevier]

High-rate communications technology leveraging the unlicensed spectrum around 60 GHz is almost ready for deployment with several demonstrations of successful wireless links. [ABSTRACT FROM PUBLISHER]

This paper presents the design of a 60 GHz phase shifter integrated with a low-noise amplifier (LNA) and power amplifier (PA) in a 65 nm CMOS technology for phased array systems. The 4-bit digitally controlled RF phase shifter is based on programmable weighted combinations of I/Q paths using digitally controlled variable gain amplifiers (VGAs). With the combination of an LNA, a phase shifter and part of a combiner, each receiver path achieves 7.2 dB noise figure, a 360^\circ phase shift range in steps of approximately 22.5^\circ, an average insertion gain of 12~dB at 61~GHz, a 3 dB-bandwidth of 5.5 GHz and dissipates 78 mW. Consisting of a phase shifter and a PA, one transmitter path achieves a maximum output power of higher than +8.3 dBm, a 360^\circ phase shift range in 22.5^\circ steps, an average insertion gain of 7.7 dB at 62 GHz, a 3 dB-bandwidth of 6.5 GHz and dissipates 168 mW. [ABSTRACT FROM PUBLISHER]

Integration of mm-wave multiple-antenna systems on silicon-based processes enables complex, low-cost systems for high- frequency communication and sensing applications. In this paper, the transmitter and LO-path phase-shifting sections of the first fully integrated 77-GHz phased-array transceiver are presented. The SiGe transceiver utilizes a local LO-path phase-shifting architecture to achieve beam steering and includes four transmit and receive elements, along with the LO frequency generation and distribution circuitry. The local LO-path phase-shifting scheme enables a robust distribution network that scales well with increasing frequency and/or number of elements while providing high-resolution phase shifts. Each element of the heterodyne transmitter generates +12.5 dBm of output power at 77 GHz with a band- width of 2.5 GHz leading to a 4-element effective isotropic radiated power (EIRP) of 24.5 dBm. Each on-chip PA has a maximum saturated power of +17.5 dBm at 77 GHz. The phased-array performance is measured using an internal test option and achieves 12-dB peak-to-null ratio with two transmit and receive elements active. [ABSTRACT FROM AUTHOR]