1. Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing.
- Author
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Pavelescu, E.-M., Ticoş, D., Ligor, O., Romaniţan, C., Matei, A., Comănescu, F., Ţucureanu, V., Spânulescu, S.I., Ticoş, C., Ohshima, T., Nakamura, T., Imaizumi, M., Goldman, R.S., Wakahara, A., and Yamane, K.
- Subjects
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RAPID thermal processing , *PHOTOLUMINESCENCE , *MOLECULAR beam epitaxy , *IRRADIATION , *ALLOYS , *ELECTRONS , *BAND gaps - Abstract
6-MeV electrons irradiation of a nearly lattice-matched P-rich GaPAsN-on-GaP epilayer, grown by molecular beam epitaxy, and subsequent rapid thermal annealing at 650 °C are found to induce much stronger photoluminescence than what is observed for an identical as-grown sample annealed in similar conditions. At the same time, exciton localization at low temperatures decreased and alloys crystallinity improved as seen by power-dependent photoluminescence and Raman spectroscopy, respectively. These irradiation-related phenomena occurred without change in the alloy macroscopic composition as revealed by X-ray diffraction. • 6-MeV electrons irradiation degrades photoluminescence from GaPAsN alloys • Photoluminescence increase seen in irradiated GaPAsN after rapid thermal annealing • No compositional change observed in irradiated alloys after the thermal treatment [ABSTRACT FROM AUTHOR]
- Published
- 2024
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