1. Instability of DX-like Impurity Centers in PbTe:Ga at Annealing.
- Author
-
Dolzhenko, D. E., Demin, V. N., Ivanchik, I. I., and Khokhlov, D. R.
- Subjects
ANNEALING of crystals ,BAND gaps - Abstract
The kinetics of variation in the resistance of PbTe:Ga single crystals, with their Fermi level pinned within the band gap, during annealing at temperatures of up to 400°C was studied for the first time. It is shown that annealing the crystals for only several minutes at 200-250°C leads to the transformation of the material, which is semi-insulating at low temperatures, into a strongly degenerate semiconductor with a free electron concentration of about 10[sup -18] cm[sup -3]. In other words, annealing results in the decomposition of DX-like impurity centers, which account for Fermi level pinning within the PbTe:Ga band gap. The corresponding activation energy is determined. It is found that high-temperature annealing at about 400°C promotes the tendency to a partial recovery of semi-insulating properties. [ABSTRACT FROM AUTHOR]
- Published
- 2000
- Full Text
- View/download PDF