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1. The Impact of Light on Current DLTS and Gate-Lag Transients of AlGaAs-GaAs HFETs.

Author

Verzellesi, G., Cavallini, A., Basile, A.F., Castaldini, A., and Canali, C.

Subjects
FIELD-effect transistors, ALUMINUM compounds, GALLIUM arsenide semiconductors, HETEROSTRUCTURES, PHOTONS, BAND gaps
Abstract

Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels. [ABSTRACT FROM AUTHOR]

Published
2004
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