1. Direct current transport mechanisms in n-InSe/p-CdTe heterostructure.
- Author
-
Gorley, P. M., Prokopenko, I. V., Grushka, Z. M., Makhniy, V. P., Grushka, O. G., and Chervinsky, O. A.
- Subjects
HETEROJUNCTIONS ,HETEROSTRUCTURES ,SEMICONDUCTORS ,HIGH temperatures ,RADIATION - Abstract
The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at the boundary between the semiconductors form a stable periodic structure acting as slow recombination centers for the carriers. The properties of the material suggest promising application perspectives for n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures and elevated radiation. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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