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The analytical calculation of the bit error rate (BER) of digital optical receivers that employ avalanche photodiodes (APDs) is challenging due to 1) the stochastic nature of the avalanche photodiode's impulse-response function and 2) the presence of intersymbol interference (ISI). At ultrafast transmission rates, ISI becomes a dominant component of the BER, and its effect on the BER should be carefully addressed. One solution to this problem, termed the bit-pattern-dependent (PD) approach, is to first calculate the conditional BER given a specific bit pattern and then average over all possible bit patterns. Alternatively, a simplifying method, termed the bit-pattern-independent (PI) approach, has been commonly used whereby the average bit stream is used to calculate the distribution of the receiver output, which, in turn, is used to calculate the BER. However, when ISI is dominant, the PI approximation is inaccurate. Here, the two approaches are analytically compared by analyzing their asymptotic behavior and their bounds. Conditions are found to determine when the PI method overestimates the BER. The BER found using the PD method exponentially decays with the received optical power, whereas for the PI approach, the BER converges to a constant, which is unrealistic. For an InP-based APD receiver with a 100-nm multiplication layer, the PI method is found to be inaccurate for transmission rates beyond 20 Gb/s. [ABSTRACT FROM PUBLISHER]

We report on engineering impact ionization characteristics of In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application. [ABSTRACT FROM AUTHOR]