1. Synthesis of thin-film CuMn2O4 for low-temperature CO oxidation.
- Author
-
Shen, Kai, Wang, Ching-Yu, Rai, Rajeev Kumar, Stach, Eric A., Vohs, John M., and Gorte, Raymond J.
- Subjects
- *
ATOMIC layer deposition , *THICK films , *THIN films , *HIGH temperatures , *OXIDATION , *COPPER - Abstract
Thin films, 0.5- and 1.0-nm thick, of CuMn 2 O 4 were synthesized on γ-Al 2 O 3 using Atomic Layer Deposition (ALD); and their catalytic activities for CO oxidation were measured and compared to that of bulk CuMn 2 O 4. For bulk CuMn 2 O 4 , the surface area decreased dramatically when the sample was calcined at 1073 K; but the area-specific rates for CO oxidation were the same for bulk samples calcined at 473 K and 1073 K. For thin films of CuMn 2 O 4 on γ-Al 2 O 3 , both the surface area and spinel structure were maintained following oxidation at 1073 K or reduction at 973 K. Area-specific, CO-oxidation rates on the ALD-prepared catalysts were somewhat lower than those found on bulk CuMn 2 O 4 ; however, adding an additional ALD cycle of Cu on the CuMn 2 O 4 /γ-Al 2 O 3 increased the rates to the same level as that of the bulk CuMn 2 O 4. [Display omitted] • 0.5-nm thick film of CuMn 2 O 4 was synthesized on γ-Al 2 O 3 by atomic layer deposition. • Thin-film CuMn 2 O 4 maintains a high surface area at elevated temperatures. • Cu-terminated CuMn 2 O 4 film has the same CO oxidation activity as bulk CuMn 2 O 4. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF