1. Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant.
- Author
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Jung, Yong Chan, Kim, Jin-Hyun, Hernandez-Arriaga, Heber, Mohan, Jaidah, Hwang, Su Min, Le, Dan N., Sahota, Akshay, Kim, Harrison Sejoon, Kim, Kihyun, Choi, Rino, Nam, Chang-Yong, Alvarez Jr., Daniel, Spiegelman, Jeffrey, Kim, Si Joon, and Kim, Jiyoung
- Subjects
ATOMIC layer deposition ,OXIDIZING agents ,BREAKDOWN voltage ,STRAY currents ,FERROELECTRIC devices - Abstract
In this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf
0.5 Zr0.5 O2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H2 O2 oxidant in the atomic layer deposition process. As a consequence of this densification, H2 O2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H2 O2 -based HZO capacitor with a high remanent polarization (Pr ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O3 -based HZO capacitor requires wake-up cycling to achieve stable Pr , the H2 O2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H2 O2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C). [ABSTRACT FROM AUTHOR]- Published
- 2022
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