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The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the fabrication of graphene field‐effect transistors (GFETs) with UV‐ALD Al2O3 dielectric thin films is demonstrated. Optimal UV irradiation (5 s per cycle) during the ALD process results in denser and smoother Al2O3 dielectric films deposited on the graphene surface with the intimate graphene‐dielectric interface, while excessive UV irradiation in turn prohibits the film nucleation. As a result, the GFETs with a high‐quality dielectric layer deposited by UV‐ALD show improved performance with a Dirac voltage close to 0 V and hole mobility of 1221 cm2 V−1 s−1, i.e., > 200% increase compared to those with thermal ALD. This study demonstrates that UV‐ALD is an effective and simple option to realize a high‐quality interface between 2D materials and ultra‐thin dielectric films. [ABSTRACT FROM AUTHOR]

B Graphene Field Effect Transistors b In article number 2300074 Jeong Woo Shin, Jihwan An, and co-workers show the application of ultra-violet light-assisted atomic layer deposition (UV-ALD) to effectively functionalize graphene surfaces and fabricate high-performance graphene field effect transistors (GFETs). The GFET with an UV-ALD Al SB 2 sb O SB 3 sb dielectric layer shows a low Dirac voltage and a high hole mobility that is 3 times improved compared to those by thermal ALD. A high quality interface between 2D material and atomic layer deposited thin film is demonstrated. [Extracted from the article]