Search

We report here two processes for fabricating quantum devices based on local anodization induced by Atomic Force Microscope (AFM). The first process involves ultra-thin films of doped silicon-on-insulator (SOI) passivated with hydrogen. AFM-drawn oxide lines create a chemical contrast that is used as a mask for silicon wet etch. Etching is performed down to the buried silicon oxide layer, thus leading to silicon nanowires supported on insulator. We show that this process appears well suited to obtain SOI nanostructures and investigate electrical transport though silicon wires with sub-1000 nm2 cross-section. In the second process, diffusion of oxygen species is performed through the whole layer of metallic ultra-thin films, which provides a technique for direct writing of insulating regions. This technique was applied to ultra-thin niobium films for fabricating mesoscopic structures. A superconducting quantum interferometer useful for nanomagnetism is demonstrated. [Copyright &y& Elsevier]

We present a fabrication method of superconducting quantum interference devices (SQUIDs) based on direct write lithography with an atomic force microscope (AFM). This technique involves maskless local anodization of Nb or NbN ultrathin films using the voltage biased tip of the AFM. The SQUIDs are of weak-link type, for which two geometries have been tested: Dayem and variable thickness nanobridges. The magnetic field dependence of the maximum supercurrent Ic(Φ) in resulting SQUIDs is thoroughly measured for different weak link geometries and for both tested materials. It is found that the modulation shape and depth of Ic(Φ) curves are greatly dependent on the weak link size. We analyze the results taking into account the kinetic inductance of nanobridges and using the Likharev–Yakobson model. Finally we show that the present resolution reached by this technique (20 nm) enables us to fabricate Nb weak-links which behavior approaches those of ideal Josephson junctions. [Copyright &y& Elsevier]