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In this work we use atomic force microscopy to study the early growth stages of para-sexiphenyl (PSP) films grown on mica by Hot Wall Epitaxy. It is shown that self-organization of PSP molecules occurs during the growth controlled mainly by the substrate temperature and deposition time. In addition X-ray diffraction measurements were performed using synchrotron radiation. These measurements confirmed very high crystalline quality of the grown films. [ABSTRACT FROM AUTHOR]

In this part of our investigations, we mainly use atomic force microscopy to study the growth of para-sexiphenyl (PSP) films on mica. It is shown that self-organization of PSP molecules occurs during the deposition controlled by the substrate temperature and deposition time. In addition, X-ray diffraction (XRD) measurements were performed using synchrotron radiation. They confirmed the very high crystalline quality of the grown films. [Copyright &y& Elsevier]

In this work we have used atomic force microscopy and X-ray diffraction by synchrotron radiation to investigate the growth kinetics and morphology of para-sexiphenyl layers. The results of our investigations can be summarized as follows: (a) para-sexiphenyl grows on mica epitaxialy; (b) a rearrangement from randomly distributed small para-sexiphenyl islands with compact shape to elongated islands occurs during the growth if the critical island density is reached; (c) with further increase of the growth time the islands become elongated, quickly reaching a fixed asymptotic width while their height remains much smaller than their length and width. [Copyright &y& Elsevier]