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Exceptional points (EPs) are the singularities of a non-Hermitian system where the eigenenergies and eigenstates simultaneously coalesce, a topological property that gives rise to a plethora of exotic phenomena. Probing the EPs and associated effects requires the system to go through the EPs. However, the ultrahigh sensitivity of an isolated EP to the external disturbances makes accessing the EPs difficult. To overcome this limit, many approaches have been presented to form the exceptional line/ring and surface. Here, we demonstrate that a quantum exceptional chamber, which is a three-dimensional collection of the EPs, can be constructed in the coupled plasmon-quantum dot (QD) systems by the nondipole effect of the QD. For an asymmetric QD adjacent to a plasmonic nanoparticle, it is found that the contributions of multipole transitions to the coupling strength can be larger than that of dipole transition. The orientation-dependent quantum interference between the dipole and multipole transitions can lead to controllable switch between the weak and strong coupling, and provides an extra degree of freedom to form a high-dimension EP space. Our approach provides a robust platform for accessing the quantum EPs and related applications.

Employing nanostructure to generate large chiroptical response has been cultivated as an emerging field, for its great potentials in integrated optics, biochemistry detections, etc. However, the lack of intuitive approaches for analytically describing the chiroptical nanoparticles has discouraged researchers from effectively designing advanced chiroptical structures. In this work, we take the twisted nanorod dimer system as a basic example to provide an analytical approach from the perspective of mode coupling, including far-field coupling and near-field coupling of nanoparticles. Using this approach, we can calculate the expression of circular dichroism (CD) in the twisted nanorod dimer system, which can establish the analytical relationship between the chiroptical response and the basic parameters of this system. Our results show that the CD response can be engineered by modulating the structure parameters, and a high CD response of ∼ 0.78 under the guidance of this approach has been achieved.

Plasmons, the electromagnetic excitations coupled with electron waves, possess the intrinsic ability of manipulating light at subwavelength scales down to picometer. This ability not only helps uncovering the fascinating quantum behaviors that strengthen the basic understanding of quantum science, but also enables the inventions of various quantum optoelectronic devices, triggering the birth of quantum plasmonic technology. The past decade has witnessed the flourishing of this technology. In this review, we first focus on fundamental investigations into quantum behaviors for both “isolated” plasmonic nanostructures and “coupled” plasmon-emitter systems, emphasizing new theoretical frameworks and experimental advances. Leveraging on these fundamentals, the progress in exploring and applying quantum plasmonic devices is discussed, such as quantum plasmonic circuits, nanolasers, biochemistry, and spin-orbit interaction devices. Upon summarizing the past and present developments, the future research directions and promising applications are highlighted.

Integrated photonic circuits with quantum dots provide a promising route for scalable quantum chips with highly efficient photonic sources. However, unpolarized emission photons in general sacrifice half efficiency when coupling to the waveguide fundamental mode by a cross polarization technique for suppressing the excitation laser, while suspended waveguide photonics sources without polarization filters have poor scalability due to their mechanical fragility. Here, we propose a strategy for overcoming the challenge by coupling an elliptical Bragg resonator with waveguides on a solid-state base, featuring near-unity polarization efficiency and enabling on-chip pulsed resonant excitation without any polarization filters. We theoretically demonstrate that the proposed devices have outstanding performance of a single-photon source with 80% coupling efficiency into on-chip planar waveguides and an ultra-small extinction ratio of 10 − 11 , as well as robustness against quantum dot position deviation. Our design provides a promising method for scalable quantum chips with a filter-free high-efficiency single-photon source.

Full-field optical angiography is critical for vascular disease research and clinical diagnosis. Existing methods struggle to improve the temporal and spatial resolutions simultaneously.Spatiotemporal absorption fluctuation imaging (ST-AFI) is proposed to achieve dynamic blood flow imaging with high spatial and temporal resolutions.ST-AFI is a dynamic optical angiography based on a low-coherence imaging system and U-Net. The system was used to acquire a series of dynamic red blood cell (RBC) signals and static background tissue signals, and U-Net is used to predict optical absorption properties and spatiotemporal fluctuation information. U-Net was generally used in two-dimensional blood flow segmentation as an image processing algorithm for biomedical imaging. In the proposed approach, the network simultaneously analyzes the spatial absorption coefficient differences and the temporal dynamic absorption fluctuation.The spatial resolution of ST-AFI is up to 4.33 μm, and the temporal resolution is up to 0.032 s. In vivo experiments on 2.5-day-old chicken embryos were conducted. The results demonstrate that intermittent RBCs flow in capillaries can be resolved, and the blood vessels without blood flow can be suppressed.Using ST-AFI to achieve convolutional neural network (CNN)-based dynamic angiography is a novel approach that may be useful for several clinical applications. Owing to their strong feature extraction ability, CNNs exhibit the potential to be expanded to other blood flow imaging methods for the prediction of the spatiotemporal optical properties with improved temporal and spatial resolutions.

Optical microcavities have widely been employed to enhance either the optical excitation or the photon emission processes for boosting light matter interactions at nanoscale. When both the excitation and emission processes are simultaneously facilitated by the optical resonances provided by the microcavities, as referred to the dual-resonance condition in this article, the performances of many nanophotonic devices approach to the optima. In this work, we present versatile accessing of dual-resonance conditions in deterministically coupled quantum-dot(QD)-micopillars, which enables emission from exciton (X) - charged exciton (CX) transition with improved single-photon purity. In addition, the rarely observed up-converted single-photon emission process is achieved under dual-resonance condition. We further exploit the vectorial nature of the high-order cavity modes to significantly improve the excitation efficiency under the dual-resonance condition. The dual-resonance enhanced light-matter interactions in the quantum regime provides a viable path for developing integrated quantum photonic devices based on cavity quantum electrodynamics (QED) effect e.g., highly-efficient quantum light sources and quantum logical gates., 6 pages,5 figures

High-performance solid-state quantum sources in the telecom band are of paramount importance for long-distance quantum communications and the quantum Internet by taking advantage of a low-loss optical fiber network. Here, we demonstrate bright telecom-wavelength single-photon sources based on In(Ga)As/GaAs quantum dots (QDs) deterministically coupled to hybrid circular Bragg resonators (h-CBRs) by using a wide-field fluorescence imaging technique. The QD emissions are redshifted toward the telecom O-band by using an ultra-low InAs growth rate and an InGaAs strain reducing layer. Single-photon emissions under both continuous wave (CW) and pulsed operations are demonstrated, showing high brightness with count rates of 1.14 MHz and 0.34 MHz under saturation powers and single-photon purities of g ( 2 ) ( 0 ) = 0.11 ± 0.02 (CW) and g ( 2 ) ( 0 ) = 0.087 ± 0.003 (pulsed) at low excitation powers. A Purcell factor of 4.2 with a collection efficiency of 11.2 % ± 1 % at the first lens is extracted, suggesting efficient coupling between the QD and h-CBR. Our work contributes to the development of highly efficient single-photon sources in the telecom band for fiber-based quantum communication and future distributed quantum networks.

Photons that have a helical phase front, that is, twisted photons, can carry a discrete, in principle, unlimited, but quantized amount of orbital angular momentum (OAM). Hence, twisted single photons constitute a high-dimensional quantum system with information-processing abilities beyond those of two-level single-photon qubits. To date, the generation of single photons carrying OAM has relied on a non-linear process in bulk crystals, for example, spontaneous parametric down-conversion, which limits both the efficiency and the scalability of the source. Here, we present a bright solid-state source of single photons in an OAM superposition state with a single-photon purity of g(2)(0) = 0.115(1) and a collection efficiency of 23(4)%. The mode purity of the single-photon OAM states is further examined via projection measurements. Future developments of integrated quantum photonic devices with pure OAM states as an additional degree of freedom may enable high-dimensional quantum information processing. Single photons with high orbital angular momenta can act as higher order flying qubits, but efficient generation is scarce. The integration of a single quantum dot emitter into an on-chip mircoring resonator enables the generation of single photons in an orbital angular momentum superposition state.

Generation of multi-photon entangled states with high efficiency in integrated photonic quantum systems is still a big challenge. The usual three-photon generation efficiency based on the third-order nonlinear effect is extremely low. Here, we propose a scheme to generate three-photon correlated states, which are entangled states in frequency space and bound states in real space, with high efficiency. This method relies on two crucial processes. On one hand, by employing a Sagnac interferometer, an incident photon can be transformed into a symmetric superposition of the clockwise and counterclockwise modes of the Sagnac loop, which can then be perfectly absorbed by the emitter. On the other hand, the coupling strengths of the two transition paths of the emitter to the Sagnac loop are set to be equal, under which the absorbed photon can be emitted completely from the cascaded transition path due to quantum interference. By adjusting the coupling strengths among the three transition paths of the emitter and the waveguide modes, we can control the spectral entanglement and spatial separation among the three photons. Our proposal can be used to generate three-photon entangled states on demand, and the efficiency can be higher than 90% with some practical parameters, which can find important applications in integrated quantum information processing.

Dielectric metasurfaces require high refractive index contrast materials for optimum performance. This requirement imposes a severe restraint; devices have either been demonstrated at wavelengths of 700nm and above using high-index semiconductors such as silicon, or they use lower index dielectric materials such as TiO$_{2}$ or Si$_{3}$N$_{4}$ and operate in the visible wavelength regime. Here, we show that the high refractive index of silicon can be exploited at wavelengths as short as 532 nm by demonstrating a silicon metasurface with a transmission efficiency of 47% at this wavelength. The metasurface consists of a graded array of silicon posts arranged in a square lattice on a quartz substrate. We show full 2�� phase control and we experimentally demonstrate polarization-independent beam deflection at 532nm wavelength. The crystalline silicon is placed on a quartz substrate by a bespoke layer transfer technique and we note that an efficiency >70% may be achieved for a further optimized structure in the same material. Our results open a new way for realizing efficient metasurfaces based on silicon in the visible wavelength regime., 16 pages, 6 figures, 2 tables

The colour gamut, a two-dimensional (2D) colour space primarily comprising hue and saturation (HS), lays the most important foundation for the colour display and printing industries. Recently, the metasurface has been considered a promising paradigm for nanoprinting and holographic imaging, demonstrating a subwavelength image resolution, a flat profile, high durability, and multi-functionalities. Much effort has been devoted to broaden the 2D HS plane, also known as the CIE map. However, the brightness (B), as the carrier of chiaroscuro information, has long been neglected in metasurface-based nanoprinting or holograms due to the challenge in realising arbitrary and simultaneous control of full-colour HSB tuning in a passive device. Here, we report a dielectric metasurface made of crystal silicon nanoblocks, which achieves not only tailorable coverage of the primary colours red, green and blue (RGB) but also intensity control of the individual colours. The colour gamut is hence extruded from the 2D CIE to a complete 3D HSB space. Moreover, thanks to the independent control of the RGB intensity and phase, we further show that a single-layer silicon metasurface could simultaneously exhibit arbitrary HSB colour nanoprinting and a full-colour hologram image. Our findings open up possibilities for high-resolution and high-fidelity optical security devices as well as advanced cryptographic approaches., Synchronous Nanoprinting-Hologram Metasurfaces: Towards full hue-saturation-brightness control Structural colours with hue-saturation-brightness (HSB) control and independent integration with full-colour hologram open up possibilities for optical security devices and advanced cryptographic approaches. Researchers from China and Singapore propose a crystalline-silicon nanoblock metasurface that is able to control the intensity and phase of transmitted red, green, blue (RGB) lights independently. By mixing the three RGB nanoblocks with different intensity proportions together, it is possible to control the HSB value of the transmitted light, pushing the metasurface structural colour from conventional two-dimensional hue-saturation space to a real three-dimensional HSB space. Furthermore, arbitrary HSB colour printing and full-colour hologram images can be integrated in one single metasurface structure. That makes a drastic leap for singlet multifunctional metasurfaces, instead of cascading multiple metasurfaces with one for colourprinting and the other for hologram respectively.

The generation of high-quality entangled photon pairs has been a long-sought goal in modern quantum communication and computation. So far, the most widely used entangled photon pairs have been generated from spontaneous parametric down-conversion (SPDC), a process that is intrinsically probabilistic and thus relegated to a regime of low rates of pair generation. In contrast, semiconductor quantum dots can generate triggered entangled photon pairs through a cascaded radiative decay process and do not suffer from any fundamental trade-off between source brightness and multi-pair generation. However, a source featuring simultaneously high photon extraction efficiency, high degree of entanglement fidelity and photon indistinguishability has been lacking. Here, we present an entangled photon pair source with high brightness and indistinguishability by deterministically embedding GaAs quantum dots in broadband photonic nanostructures that enable Purcell-enhanced emission. Our source produces entangled photon pairs with a pair collection probability of up to 0.65(4) (single-photon extraction efficiency of 0.85(3)), entanglement fidelity of 0.88(2), and indistinguishabilities of 0.901(3) and 0.903(3) (brackets indicate uncertainty on last digit). This immediately creates opportunities for advancing quantum photonic technologies.

Photonic nanostructures with resonant modes that can generate large electric field (EF) enhancements are applied to enhance light-matter interactions in nanoscale, bringing about great advances in both fundamental and applied science. However, a small hot spot (i.e., the regions with strong EF enhancements) and highly inhomogeneous EF distribution of the resonant modes usually hinder the enhancements of light-matter interactions in a large spatial scale. Additionally, it is a severe challenge to simultaneously generate multiple resonant modes with strong EF enhancements in a broadband spectral range, which greatly limits the capacity of a photonic nanostructure in boosting optical responses including nonlinear conversion, photoluminescence, etc. In order to overcome these challenges, we presented an arrayed hyperbolic metamaterial (AHMM). This AHMM structure is applied to simultaneously enhance the three-photon and four-photon luminescence of upconversion nanoparticles. Excitingly, the enhancement of the three-photon process is 1 order of magnitude larger than previous records, and for the enhancing four-photon process, we achieve an enhancement of 3350 times, greatly beneficial for overcoming the crucial problem of low efficiency in near infrared light upconversion. Our results demonstrated a promising platform for realizing giant enhancements of light-matter interactions, holding potential in constructing various photonics applications such as the nonlinear light sources.

Replacing the saddle-point approximation extensively adopted in previous literature, an exact expression for the Fourier transformation of electric field distributions of reflected and refracted polarised Gaussian beams is derived to investigate the spin Hall effect of light. A general method based upon the partial differential of the light intensity distributions of the reflected and refracted propagating beams is presented to determine the beam shifts from the spin Hall effect of light. Compared with the previous integration method along one direction reported in the literature, our method not only is much more explicit, but also enables us simultaneously to obtain the transverse and longitude shifts of the reflected and refracted wave packets. Furthermore, at any propagation distance away from the interface between two optical media, the shifts of the propagating beams and their split ones can be analytically expressed by means of transverse- and longitude-deflected angles.

We propose and experimentally demonstrate a series of $L_{n}$ slot photonic crystal (PhC) microcavities, which operate as refractive index (RI) gas sensors. The cavities are simply composed of a silicon slab triangular photonic crystal with $n$ holes replaced by a slot, which do not require sophisticated design or high fabrication resolution. With the increase in $n$ , the quality factor of the cavity exponentially increases, which is explained by the envelope of electric field approaching a Gaussian profile. An $L_{9}$ slot PhC microcavity with a quality factor exceeding 30 000, sensitivity of 421 nm per RI unit (RIU), and detection limit down to $1\times 10^{-5}$ RIU was experimentally demonstrated. The performance of the device is comparable with other fine-tuned PhC microcavity structures. Due to its simple structure and high fabrication tolerance, it could have wide applications in optical sensors.

Molybdenum ditelluride (MoTe2) has recently shown promise as a gain material for silicon photonics. Reliable single-mode operation and material stability remain two of the major issues that need to be addressed to advance this exciting technology, however. Here, laser-like emission from a sandwiched MoTe2 heterostructure on a silicon single-mode resonator is reported. The heterostructure consists of a layer of MoTe2 sandwiched between thin films of hexagonal boron nitride. It is known that tellurium compounds are sensitive to oxygen exposure, which leads to rapid degradation of the exposed layers in air. By encapsulating the MoTe2 gain material, much improved environmental stability is observed. Using a recently introduced single-mode resonator design, better control over the mode spectrum of the cavity is exercised and single-mode operation with a wide free spectral range is demonstrated. At room temperature, a Q-factor of 4500 and a threshold of 4.2 kW cm−2 at 1319 nm wavelength are achieved. These results lend further support to the paradigm of 2D material-based integrated light sources on the silicon platform.

Strong coupling between solid-state quantum emitters and microcavities paves the way for optical coherent manipulation of quantum state and provides opportunities for quantum information processing. However, it is still a challenge to realize strong coupling due to the spectral and spatial mismatch between quantum emitters and cavity modes. Here, we propose a scheme to tune the coupling between a single QD and a microdisk with 1D photonic crystal nanobeam cavity. Based on Finite-Difference Time-Domain (FDTD) method and Green's function expression for the evolution operator, we demonstrate that QDs with emission wavelengths +1.27 nm and -1.44 nm detuned from the bare microdisk mode can be coupled to the system strongly. Particularly, we observe simultaneous coupling between QD and two cavity supermodes, which enriches the optical coherent control methods of quantum states. By adjusting the distance between the two cavities, we can control the coupling between QD and photons. Furthermore, benefiting from the natural integration of nanobeam cavity to waveguide, such a system provides advantages for implementing quantum internet.

Monolayer transition metal dichalcogenides (TMDs) are ideal materials for atomically thin, flexible optoelectronic and catalytic devices. However, their optoelectrical performance such as quantum yield and carrier mobility often shows below theoretical expectations due to the existence of defects. For monolayer TMD-based devices, finding a low-cost, time-efficient, and nondestructive technique to visualize the change of defect distribution in the space domain and the defect-induced change of the carrier’s lifetime is vital for optimizing their optoelectronic properties. Here, we propose a microscopic pump-probe technique to map the defect distribution of monolayer TMDs. It is found that there is a linear relationship between transient differential reflection intensity and defect density, suggesting that this technique not only realizes the visualization of the defect distribution but also achieves the quantitative estimation of defect density. Moreover, the carrier lifetime at each point can also be obtained by the technique. The technique used here provides a new route to characterize the defect of monolayer TMDs on the micro-zone, which will hopefully guide the fabrication of high-quality two-dimensional (2D) materials and the promotion of optoelectrical performance.

The emission profi le and lifetime dynamics of semiconductor quantum dots can be signifi cantly shaped and altered using dielectric and plasmonic nanostructures based on anodic aluminum oxide templates. Remarkable spectral modifi cation and a large total decay rate enhancement in the photoluminescence of quantum dots are observed when they are deposited on a pristine anodic aluminum oxide template. The modifi ed emission spectral profi le is consistent with the calculated photonic local density of states above the anodic aluminum oxide template surface, suggesting that this interesting spectral tuning phenomenon stems from the surface electromagnetic modes supported by the anodic aluminum oxide template. Furthermore, when the anodic aluminum oxide template is loaded with metallic nanowires that sustain plasmon resonances, the photoluminescence of the quantum dots can be largely enhanced. These unprecedented results suggest that the anodic aluminum oxide template can be used as a versatile platform for tailoring the photoluminescence properties of quantum emitters in future photonic and optoelectronic applications.

The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.

Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences, Beijing 100190 China(Dated: December 30, 2011)Dipole-dipole interaction between two two-level ‘atoms’ in photonic crystal nanocavity is investi-gated based on finite-difference time domain algorithm. This method includes both real and virtualphoton effects and can be applied for dipoles with different transition frequencies in both weak andstrong coupling regimes. Numerical validations have been made for dipoles in vacuum and in anideal planar microcavity. For dipoles located in photonic crystal nanocavity, it is found that thecooperative decay parameters and the dipole-dipole interaction potential strongly depend on the fol-lowing four factors: the atomic position, the atomic transition frequency, the resonance frequency,and the cavity quality factor. Properly arranging the positions of the two atoms, we can acquireequal value of the cooperative decay parameters and the local coupling strength. Large cooperativedecay parameters can be achieved when transition frequency is equal to the resonance frequency.For transition frequency varying in a domain of the cavity linewidth around the resonance frequency,dipole-dipole interaction potential changes continuously from attractive to repulsive case. Largervalue and sharper change of cooperative parameters and dipole-dipole interaction can be obtainedfor higher quality factor. Our results provide some manipulative approaches for dipole-dipole in-teraction with potential application in various fields such as quantum computation and quantuminformation processing based on solid state nanocavity and quantum dot system.

We present a fast and efficient method to compute photonic orientation-dependent local density of states (ODLDOS) in photonic crystals (PCs) based on the point group transform of the vector field. We swiftly calculate the ODLDOS by this method and acquire the same results as that computed based on many more k points in half of the first Brillouin zone (FBZ) in face-center-cubic (fcc) photonic crystals. As an example, we also apply this method to investigate the properties of woodpile photonic crystals and find the remarkable differences in the ODLDOS along different polarization directions.

Spontaneous emission lifetime distribution in the basic unit cell or on a plane of the excited emitters embedded in woodpile photonics crystals with low refractive index contrast are investigated. It is found that the spontaneous emission lifetime distribution strongly depends on the position and transition frequency of the emitters, and has the same symmetry as that of the unit cell. The lifetimes of emitters near the upper gap edge are longer than that in the center of the pseudo-gap, which is quite a contrast to the conventional concept. Furthermore, it is revealed that the polarization orientation of the emitters has significant influence on the lifetime distribution, and may result in a high anisotropy factor (defined as the difference between the maximum and minimum values of the lifetime) up to 4.2. These results may be supplied in probing the lifetime distribution or orientation-dependent local density of states in future experiments.

The spontaneous emission rate of an atom in dielectric slabs is shown to exhibit multiperiodic oscillations when the system scale is varied. These oscillations are calculated using quantum electrodynamics and analyzed using ideas from closed-orbit theory. The extracted frequencies in the emission rates by Fourier transform agree well with actions of short photon closed orbits. The oscillations in the spontaneous emission rates are interpreted as interferences of emitted photon propagating on closed orbits leaving and returning to the emitting atom. This study provides a new understanding of the spontaneous emission process for atoms in the presence of environments.

Spontaneous decay behavior from an assembly of atoms (or molecules) in a dielectric slab sandwiched by two dielectric semi-infinite spaces with arbitrary refractive indices is investigated. We introduce a lifetime distribution function to describe decay kinetics. The zero-point fluctuations of the electromagnetic field are calculated as a function of the position of atom in the slab. They display a symmetric profile with respect to the central plane of the slab in symmetric structure sample and the contributions of the guided modes and the radiation modes components both exhibit cosinelike variation with a base but with a phase difference of \ensuremath{\pi}. With the increase of the thickness of the slab, the oscillations become dense. In contrast, for the asymmetric structure case, the related curves are asymmetric with respect to the middle plane of slab and exhibit considerably distorted cosinelike oscillations. The dependence of the spontaneous emission rate of atoms on the thickness of the slab and the refractive indices of substrate also is surveyed. Our calculations show that quite wide or narrow lifetime distribution can occur for different thicknesses of the slab. The coexistence of both accelerated and inhibited decay processes appears. The calculated results are in good agreement with experimental results.

We investigate the light emission characteristics for single two level quantum dot (QD) in a realistic photonic crystal (PC) L3 cavity based upon the local coupling strength between the QD and cavity together with the Green's function in which the propagation function related to the position of the detector is taken into account. We find for a PC cavity that the line shape of the propagation function in frequency domain is identical to that of the cavity and independent on the detector's position. We confirm that this identity is not influenced by the horizontal decay of the cavity. Furthermore, it is revealed that the vacuum fluorescence spectrum of the coupled system never give the triplet in strong coupling regime. Our work demonstrates that the experimental spectral-triplet in coupled system of single QD and PC cavity cannot be individually understood by vacuum Rabi splitting without including other physics mechanism.

We present a new approach which allows one to insert a silica nanosphere with a single quantum dot into a high Q photonic crystal slab nanocavity with an asymmetric nanohole in the center. The high Q cavity is optimized by adjusting air holes around the L3-type cavity based on three-dimensional finite-difference time-domain simulation. High Q value of 48 700 in this asymmetric cavity is achieved. The performance of the cavity with an assumed silica sphere containing a single quantum dot in the nanohole is also discussed, in which the Q factor can reach 5×104 and modal volume V is 0.048μm3 (∼0.62(λ0/n)3). It is found that the electric field intensity in the nanohole is much stronger than the maximum electric field in the cavity without a nanohole. This makes it possible to locate the precise position of the quantum dot with respect to the cavity mode electric maximum. This system provides a good candidate for realizing a strong interaction between a quantum dot and cavity for the study of cavity quantum electrodynamics.

This paper proposes a method to design an incident-angle-insensitive polarization-independent polarization rotator. This polarization rotator is composed of layers of impedance-matched anisotropic metamaterial (IMAM) with each layer's optical axes gradually rotating an angle. Numerical simulation based on the generalized 4x4 transfer matrix method is applied, and the results reveal that the IMAM rotator is not only polarization-independent but also insensitive to the angle of incidence. A 90 degrees polarization rotation with tiny ellipticity variation is still available at a wide range of incident angles from 0 to 40 degrees, which is further confirmed with a microwave bi-split-ring resonator (bi-SRR) rotator. This may be valuable for the design of optoelectronic and microwave devices.

We present a detailed theoretical analysis which reveals a useful insight to understand the resonant dissipative behavior of 3D woodpile metallic photonic crystals in the spectral response. We observe that a small amount of structural parameter modifications can induce great flexibility to alter the properties of the absorption resonance with even an extremely narrow band width of ~13 nm. Analyzing the dispersive properties of the 3D woodpile metallic photonic crystals and performing thorough numerical simulations for the finite number of layers we found that the magnitude, band width, and tunability of enhanced absorption can be easily optimized, which can be of significance to design an efficient photonic crystal thermal emitter.