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1. Fabrication of TaN-gated ultra-thin mosfets (eot >1.0nm) with HfO/sub 2/ using a novel oxygen scavenging process for sub 65nm application

Author

Se Jong Rhee, Chang Yong Kang, S. Koveshnikov, S.A. Krishna, M.S. Abkar, Manhong Zhang, Injo Ok, Feng Zhu, Chang Hwan Choi, Hyungseob Kim, J.C. Lee, and Tackhwi Lee

Subjects
Argon, Fabrication, Materials science, business.industry, Annealing (metallurgy), Oxide, chemistry.chemical_element, Dielectric, Oxygen, Nitrogen, chemistry.chemical_compound, chemistry, MOSFET, Electronic engineering, Optoelectronics, business
Abstract

We developed a novel process to achieve ultra-thin gate dielectrics (EOT

Published
2005

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