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The relaxation of high-energy "hot" carriers in semiconductors is known to involve the redistribution of energy between (i) hot and cold carriers and (ii) hot carriers and phonons. Over the past few years, these two processes have been identified in lead-halide perovskites (LHPs) using ultrafast pump-probe experiments, but the interplay between these processes is not fully understood. Here we present a comprehensive kinetic model to elucidate the individual effects of the hot and cold carriers in bulk and nanocrystal $CsPbBr_{3}$ films obtained from "pump-push-probe" measurements. In accordance with our previous work, we observe that the cooling dynamics in the materials decelerate as the number of hot carriers increases, which we explain through a "hot-phonon bottleneck" mechanism. On the other hand, as the number of cold carriers increases, we observe an acceleration of the cooling kinetics in the samples. We describe the interplay of these opposing effects using our model, and by using series of natural approximations, reduce this model to a simple form containing terms for the carrier-carrier and carrier-phonon interactions. The model can be instrumental for evaluating the details of carrier cooling and electron-phonon couplings in a broad range of LHP optoelectronic materials., The following article has been submitted to The Journal of Chemical Physics. After it is published, it will be found at https://aip.scitation.org/journal/jcp

We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kelvin probe. We find that the cleaning steps largely affect the work function and the band bending of both GaN orientations. These modifications are attributed to the presence of different surface states as well as to the formation of adsorbates building up distinct surface dipoles. Besides these results, we detect that under ultraviolet illumination the work function of the surfaces exposed to HCl decreases by at least $0.2$ eV without screening of the band bending. We thus attribute the observed surface photovoltage to a photo-induced modification of the surface dipole. Overall, these results emphasize the strong dependence of the electronic properties of air-exposed GaN surfaces on adsorbates. As a result, we advocate the use of the common cleaning steps analyzed here to re-initialize at will GaN$(1\bar{1}00)$ and $(0001)$ surfaces into pre-defined states., This is the accepted manuscript version of an article that appeared in Applied Surface Science copyright (C) Elsevier. The CC BY-NC-ND 4.0 license applies, see http://creativecommons.org/licenses/by-nc-nd/4.0/ . To access the final edited and published work, see https://doi.org/10.1016/j.apsusc.2019.07.256