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1. Laser desorption ionization time-of-flight mass spectrometry of erbium-doped Ga-Ge-Sb-S glasses.

Author

Pangavhane SD, Němec P, Nazabal V, Moreac A, Jóvári P, and Havel J

Subjects
Glass chemistry, Lasers, Mass Spectrometry, Molecular Weight, Antimony chemistry, Gallium chemistry, Germanium chemistry, Sulfur chemistry
Abstract

Rationale: Rare earth-doped sulphide glasses in the Ga-Ge-Sb-S system present radiative emissions from the visible to the middle infrared range (mid-IR) range, which are of interest for a variety of applications including (bio)-chemical optical sensing, light detection, and military counter-measures. The aim of this work was to reveal structural motifs present during the fabrication of thin films by plasma deposition techniques as such knowledge is important for the optimization of thin film growth., Methods: The formation of clusters in plasma plume from different concentrations of erbium-doped Ga5Ge20Sb10S65 glasses (0.05, 0.1, and 0.5 wt. % of erbium) using laser (337 nm) desorption ionization (LDI) was studied by time-of-flight mass spectrometry (TOF MS) in both positive and negative ion mode. The stoichiometry of the Ga(m)Ge(n)Sb(o)S(p)(+/-) clusters was determined via isotopic envelope analysis and computer modelling., Results: Several Ga(m)Ge(n)Sb(o)S(p)(+/-) singly charged clusters were found but, surprisingly, only four species (Sb3S4(+/-), GaSb2S(p)(+/-) (p = 4, 5), Ga3Sb2S7(+/-) ) were common to both ion modes. For the first time, species containing rare earths (GaSb2SEr(+) and GaS6 Er2(+)) were identified in the plasma formed from rare earth-doped chalcogenide glasses, directly confirming the importance of gallium presence for rare earth bonding within the glassy matrix., Conclusions: The local structure of Ga-Ge-Sb-S glasses is at least partly different from the structure of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis; these glasses are mainly formed by [GeS4/2]/[GaS4/2] tetrahedra and [SbS3/2] pyramids. Extended X-ray absorption fine structure measurements show that Er(3+) ions in Ga-Ge-Sb-S glasses are surrounded by 7 sulphur atoms., (Copyright © 2014 John Wiley & Sons, Ltd.)

Published
2014
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2. Laser desorption ionization time-of-flight mass spectrometry of erbium-doped Ga-Ge-Sb-S glasses

Author

Sachinkumar Dagurao, Pangavhane, Petr, Němec, Virginie, Nazabal, Alain, Moreac, Pál, Jóvári, Josef, Havel, Department of Graphic Arts and Photophysics [University of Pardubice], Faculty of Chemical Technology [University of Pardubice], University of Pardubice-University of Pardubice, Institut des Sciences Chimiques de Rennes (ISCR), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Institute for Solid State Physics [Budapest], Wigner Research Centre for Physics [Budapest], Hungarian Academy of Sciences (MTA)-Hungarian Academy of Sciences (MTA), Department of Chemistry (A14/107), Masaryk University [Brno] (MUNI), Department of Physical Electronics, R&D Center for Low-Cost Plasma and Nanotechnology Surface Modifications, Support from Czech Science Foundation (Project No. 13-05082S) is greatly acknowledged. This research has been also supported by the project R&D center for low-cost plasma and nanotechnology surface modifications CZ.1.05/2.1.00/03.0086 funded by European Regional Development Fund. 10, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Antimony, Germanium, Lasers, Gallium, [CHIM.MATE]Chemical Sciences/Material chemistry, Mass Spectrometry, Molecular Weight, chalcogenide glass, EXAFS, Raman spectroscopy, erbium dopant, Glass, time-of-flight mass spectrometry, Sulfur
Abstract

International audience; RATIONALE: Rare earth-doped sulphide glasses in the Ga-Ge-Sb-S system present radiative emissions from the visible to the middle infrared range (mid-IR) range, which are of interest for a variety of applications including (bio)-chemical optical sensing, light detection, and military counter-measures. The aim of this work was to reveal structural motifs present during the fabrication of thin films by plasma deposition techniques as such knowledge is important for the optimization of thin film growth. METHODS: The formation of clusters in plasma plume from different concentrations of erbium-doped Ga5 Ge20 Sb10 S65 glasses (0.05, 0.1, and 0.5 wt. % of erbium) using laser (337 nm) desorption ionization (LDI) was studied by time-of-flight mass spectrometry (TOF MS) in both positive and negative ion mode. The stoichiometry of the Gam Gen Sbo Sp (+/-) clusters was determined via isotopic envelope analysis and computer modelling. RESULTS: Several Gam Gen Sbo Sp (+/-) singly charged clusters were found but, surprisingly, only four species (Sb3 S4 (+/-) , GaSb2 Sp (+/-) (p = 4, 5), Ga3 Sb2 S7 (+/-) ) were common to both ion modes. For the first time, species containing rare earths (GaSb2 SEr(+) and GaS6 Er2 (+) ) were identified in the plasma formed from rare earth-doped chalcogenide glasses, directly confirming the importance of gallium presence for rare earth bonding within the glassy matrix. CONCLUSIONS: The local structure of Ga-Ge-Sb-S glasses is at least partly different from the structure of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis; these glasses are mainly formed by [GeS4/2 ]/[GaS4/2 ] tetrahedra and [SbS3/2 ] pyramids. Extended X-ray absorption fine structure measurements show that Er(3+) ions in Ga-Ge-Sb-S glasses are surrounded by 7 sulphur atoms. Copyright © 2014 John Wiley & Sons, Ltd.

Published
2014
Full Text
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