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In this work, Pb 1−3 x /2 La x ZrO 3 (x = 0–0.12) (PLZ- x) antiferroelectric thin films were fabricated on Pt(111)/TiO 2 /SiO 2 /Si substrates using chemical solution method. Smaller cations (La3+) and vacancies were introduced into A-sites of perovskite structure to construct chemical pressure. According to phenomenological theory, chemical pressure can increase the energy barrier between antiferroelectric (AFE) and ferroelectric (FE) phase, and enhance antiferroelectricity of the system. As a result, a large energy storage density (W re) of 23.1 J cm−3 and high efficiency (η) of 73% were obtained in PLZ-0.10 films, while PLZ-0 films displayed lower W re (15.1 J cm−3) and η (56%). More importantly, PLZ-0.10 films exhibited an excellent cycling stability with a variation of ˜2% after 1 × 108 cycles. The results demonstrate that heavily La-doped PbZrO 3 films with high energy storage density, high efficiency and excellent cycling stability can be considered as potential candidates for energy storage applications. [ABSTRACT FROM AUTHOR]

Highly (001)-oriented pure PbZrO 3 (PZO) films and Sn-substituted PZO films are deposited on (001)-LaNiO 3 buffered SiO 2 /Si substrates by RF magnetron sputtering. Different Sn-substituted PbZrO 3 films (PbZr 1-x Sn x O 3 , x = 0%, 3%, 5%, 10%) with orthorhombic anti-ferroelectric phase are fabricated. The effects of Sn substitution on structure and energy performance have been investigated in detail. The switching electric fields are enlarged and energy loss is lowered by Sn substitution. Recoverable energy density (Wr) of 14.8 ± 0.2 J/cm 3 and energy efficiency (η) of 71.2 ± 0.5% at 900 kV/cm are obtained in 5% Sn-substituted PZO film (~ 360 nm). Furthermore, with thicker thickness of ~ 650 nm, Wr and η can be further improved. The Sn-substituted PZO film is believed to be an improved material for applications in energy storage systems and 5% Sn-substituted PZO film exhibits the highest Wr and η in this work. [ABSTRACT FROM AUTHOR]