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A novel vacuum field-emission differential amplifier (duff-amp) based on carbon-nanotube (CNT) emitters has been developed, modeled, and its ac performance characterized. A dual-mask microfabrication process was employed to achieve a single-chip diff-amp by integrating matched CNT field-emission triodes with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well matched in device characteristics. The measured ac common-mode-rejection ratio (CMRR) of the diff-amp was ∼50 dB. The proposed CMRR semianalytical model was validated with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve high-temperature and radiation-tolerant vacuum integrated circuits. [ABSTRACT FROM AUTHOR]

In this study, a novel approach of fabricating lateral carbon nanotube (CNT) emitters on an insulating substrate with an integrated metallic anode utilizing a dual-mask microfabrication process is presented. The selective synthesis of lateral CNTs was achieved with a two-step microwave plasma-enhanced chemical vapor deposition involving a hydrogen plasma treatment prior to CNT synthesis. CNTs were found to grow laterally and along the edges of a trimetal layer containing a sandwiched catalytic thin film. Field emission characterization showed that the lateral CNT emitters had a turn-on field of 4.0 V/μm and current flow of 1.0 μA at ∼5.5 V/μm. Overall, the present study demonstrates a viable approach for fabricating lateral emitters with high aspect ratio and integrated with a metallic anode, a device potentially useful for vacuum microelectronics applications. [ABSTRACT FROM AUTHOR]