1. Properties of As[sup +]-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications.
- Author
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J. W. Tomm, B., V. Strelchuk, B., A. Gerhardt, B., U. Zeimer, B., M. Zorn, B., H. Kissel, B., M. Weyers, B., and J. Jiménez, B.
- Subjects
ION implantation ,QUANTUM wells ,ANNEALING of metals ,GALLIUM arsenide ,CRYSTALS ,RAMAN spectroscopy ,IONIZATION (Atomic physics) - Abstract
Both crystal structure and energy band-structure changes caused by As[sup +] implantation and by subsequent annealing in GaAs and in an In[sub 0.253]Ga[sub 0.747]As quantum well are studied. We demonstrate that the main implantation impact to the crystal structure is the creation of a large number of point defects and strong compressive strain of up to -0.1%. Raman and x-ray data demonstrate almost complete structural recovery for rapid thermal annealing temperatures>=600 °C. While the lattice expansion becomes relaxed by annealing, the implantation-induced ionized point defects are still present up to the highest annealing temperatures applied. Under these circumstances, a 22 meV blueshift of the heavy-hole–electron (1hh–1e) transition within the quantum well and a substantial reduction of the nonequilibrium carrier lifetime remain as consequence of implantation. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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