1. Study of P3HT/ PCBM morphology using Raman spectroscopy.
- Author
-
Kumar, Sunil, Kumar, Manoj, Rathi, Sonika, Yadav, Anjali, Upadhyaya, Aditi, Gupta, Saral K., Singh, Amarjeet, Shekhawat, Manoj Singh, Bhardwaj, Sudhir, and Suthar, Bhuvneshwer
- Subjects
RAMAN spectroscopy ,BUTYRATES ,THIN films ,SPIN coating ,ELECTRONIC equipment ,ANNEALING of metals - Abstract
In the present work we have deposited PEDOT: PSS (poly3,4-ethylene dioxythiophene -poly (styrenesulfonate)) then Pristine P3HT (Poly-3 hexylthiophene-2,5-diyl), PCBM (6,6- PhenylC
61 butyric acid methyl ester) and its blend composite (P3HT:PCBM) thin films on ITO substrate via spin coating technique. Pristine P3HT, pristine PCBM and blend thin film samples were annealed at different temperatures (50°C, 80°C and 110°C) for 1 hr. Raman spectra was measured for each thin film samples as prepared (at room temperature or 25°C) and annealed at different temperatures (50°C, 80°C, 110°C). Then we calculated area under Raman peaks which is representation of Raman Intensity and observed that area under Raman peak varies with annealing temperatures. The increase in peak intensity appears due to increased crystallinity in annealed thin films. The mixing of PCBM hinders the crystallization of P3HT in blend. Mixed amorphous phase plays major role in charge transportation in electronic devices. [ABSTRACT FROM AUTHOR]- Published
- 2018
- Full Text
- View/download PDF