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Attempts to gauge the level of boron clustering by subjecting boron-doped well structures formed in Czochralski silicon to a self-implant and various anneals to form a population of type {311} defects. Use of quantitative transmission electron microscopy; Residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature.

Studies the interactions between end-of-range dislocation loops and {311} defects as a function of their proximity. Variation of the depth of the loop layer from the surface; Annealing of the wafers; Decrease in the number of interstitial {311} defects as the projected range damage was brought closer to the loop layer; Increase in the number of rectangular elongated defects.

Measures the kinetics of solid phase epitaxial regrowth (SPER) during annealing of strained silicon[sub 0.88]germanium[sub 0.12] alloys. Use of time-resolved reflectivity technique; Amorphization of the epilayer by silicon implantation; Dependence of SPER velocity on interface position.

Abstract: The electrical activation of B+ implantation at 2keV to doses of 5.0×1013–5.0×1015 cm−2 in crystalline and pre-amorphized Ge following annealing at 400°C for 1.0h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted to a dose of 5.0×1015 cm−2 displaying an estimated maximum active B concentration of 4.0×1020 cm−3 as compared to 2.0×1020 cm−3 for the crystalline sample. However, incomplete activation was observed for all samples across the investigated dose range. For the sample implanted to a dose of 5.0×1013 cm−2, activation values were 7% and 30%, for c-Ge and PA-Ge, respectively. The results suggest the presence of an anomalous clustering phenomenon of shallow B+ implants in Ge. [Copyright &y& Elsevier]

Abstract: The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20–300keV to doses of 1.0×1013–1.0×1017 cm−2. Transmission electron microscopy revealed clusters of voids just below the surface for implant energies ≤120keV at a dose of 2.0×1015 cm−2 and complete surface coverage for an implant energy of 130keV and doses ≥1.0×1016 cm−2. Void clusters did not change in size or density after isothermal annealing at 330°C for 176min. The initial void formation is discussed in terms of the vacancy clustering and “microexplosion” theories with a damage map detailing the implant conditions necessary to produce voids. [Copyright &y& Elsevier]