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Start Over Author "Suckow, Stephan" Topic annealing of crystals
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1. Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers.

Author

Berghoff, Birger, Suckow, Stephan, Rölver, Robert, Spangenberg, Bernd, Kurz, Heinrich, Sologubenko, Alla, and Mayer, Joachim

Subjects
*PHYSICS research, *QUANTUM wells, *ENERGY-band theory of solids, *POTENTIAL theory (Physics), *PHOTOVOLTAIC power systems, *ANNEALING of crystals, *SILICON oxide films, *STOICHIOMETRY
Abstract

The vertical charge transport through Si/SiOx multiple quantum wells (QWs) is investigated. Upon thermal annealing, segregation of excess Si from the SiOx layers leads to the formation of highly conductive pathways between Si grains from adjacent QWs separated by ultrathin silicon oxide barriers with barrier heights of 0.53–0.65 eV. Compared to stoichiometric Si/SiO2 layer stacks, conductivity is increased by up to ten orders of magnitude, which opens the way to an efficient charge carrier extraction in photovoltaic systems with distinct quantum confinement. [ABSTRACT FROM AUTHOR]

Published
2009
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