1. Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature
- Author
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Zheng, X.J., Peng, J.F., Chen, Y.Q., He, L., Feng, X., Zhang, D.Z., Gong, L.J., and Wu, Q.Y.
- Subjects
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PIEZOELECTRIC materials , *BISMUTH compounds , *FERROELECTRICITY , *ELECTRIC properties of thin films , *ANNEALING of crystals , *TEMPERATURE effect , *CHEMICAL decomposition , *ORGANOMETALLIC chemistry , *MICROSTRUCTURE - Abstract
Abstract: Bi3.25Eu0.75Ti3O12 (BET) thin films were deposited on Pt/Ti/SiO2/Si(111) substrates by a metal-organic decomposition method. The effects of annealing temperatures 600–800°C on microstructure, ferroelectric, dielectric and piezoelectric properties of BET thin films were studied in detail. The spontaneous polarization (87.4×10−6 C/cm2 under 300kV/cm), remnant polarization (65.7×10−6 C/cm2 under 300kV/cm), the dielectric constant (992.9 at 100kHz) and the effective piezoelectric coefficient d 33 (67.3pm/V under 260kV/cm) of BET thin film annealed at 700°C are better than those of the others. The mechanisms concerning the dependence of the enhancement d 33 are discussed according to the phenomenological equation, and the improved piezoelectric performance could make the BET thin film a promising candidate for piezoelectric thin film devices. [Copyright &y& Elsevier]
- Published
- 2010
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