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The influence of illumination with different intensity on changing parameter's anisotropy of mobility K = μ˔/μǁ = mǁ/m˔ · 〈τ˔〉/〈τǁ〉 in γ-irradiated by the chosen dose examples n-Ge with heterogeneous distribution of doping impurity in crystal volume is analyzed. On the basis of experimental and theoretical calculations it is shown that in γ-irradiated n-Ge the longitudinal component of mobility μǁ in the separate isoenergetic ellipsoid does not practically depend on illumination intensity. The essential change of transversal mobility component μ˔ at the increase of illumination intensity is defined by the change in anisotropy parameter of relaxation times Kτ = 〈τǁ〉/〈τǁ〉. [ABSTRACT FROM AUTHOR]

On the basis of the longitudinal piezoresistance in the case of X//J// [100] and the theory of anisotropic scattering a constant of the deformation potential Ξd in n-Si is defined. It is shown that while determining the parameter of anisotropy of the relaxation times for n-Si with the deep energetic level Ec - 0:17 eV it is necessary to take into account the dependence of concentration of ionized deep centers on deformation. [ABSTRACT FROM AUTHOR]

In n-Si, intervalley scattering of electrons can be of two types, f scattering and g scattering. With the purpose of establishing the contributions of f- and g-type transitions to intervalley scattering, the piezoresistance of n-Si crystals is studied in the temperature range T = 295-363 K. The initial concentration of charge carriers in the n-Si samples is 1.1 × 10 cm, and the resistivity at 300 K is ρ = 30 Ω cm. As the temperature is increased, the region of leveling-off of the piezoresistance shifts to lower voltages. The characteristic feature of the dependence ρ = ρ( T) plotted in the double logarithmic coordinates (logρ = f(log T)) is the transition from the slope 1.68 to the slope 1.83 at T > 330 K. This is attributed to the substantial contribution of g transitions to intervalley scattering in the high-temperature region. For verification of the interpretation of the dependence ρ = ρ( T), the dependence is calculated on the basis of the theory of anisotropic scattering with consideration for intervalley transitions. [ABSTRACT FROM AUTHOR]