1. In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation.
- Author
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Vibbert, S. T., Watkins, A. C., D'Amico, J. V., McKinney, M. W., Vibbert, D. S., Zhang, E. X., Ball, D. R., Haeffner, T. D., Alles, M. L., Kauppila, J. S., and Massengill, L. W.
- Subjects
- *
ANALOG circuits , *STRAY currents , *MIXED signal circuits , *ASTROPHYSICAL radiation , *IONIZING radiation - Abstract
An on-chip measurement circuit that was specifically designed to capture the high-speed transient characteristics of photocurrent is employed to measure total-ionizing-dose (TID)-induced leakage from 10 keV X-rays. This circuit uses a photocurrent-controlled oscillator (PCO) to produce an analog frequency, which provides linearity comparable to traditional, off-chip methods of TID measurement. The circuit was fabricated in a sub-50 nm, fully depleted silicon-on-insulator (FD-SOI) technology. TID-induced leakage currents were measured using the circuit and results were compared to off-chip direct measurements from identical transistor arrays. Additionally, potential in situ applications of this circuit in conjunction with a TID-compensating back-gate biasing technique are explored. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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