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The present work reports the detection of new switching materials in lead containing selenium rich quaternary glasses. The results of current-voltage characteristics in some multi-component glasses of Se-Te-Sn-Pb system confirms the memory switching behavior in parent Se-Te-Sn glass that changes into threshold switching behavior after incorporation of Pb. [ABSTRACT FROM AUTHOR]

This paper reports the invariance of the Meyer-Neldel Rule for thermally activated d. c. conduction under the aging effects in glassy Se (g-Se) and As 2 Se 3 glass. For this purpose, we have analyzed the electrical data of the samples (i.e. glassy Se and As 2 Se 3 glass) in bulk form. The fresh samples of both materials were prepared by the well-known melt-quench technique. Particularly, we have done current-voltage (I–V) measurements at different temperatures. Using the I–V characteristics, we calculated d. c. conductivity and the activation energy involved in d. c. conduction for both fresh as well as aged samples. Finally, we observed that the Meyer-Neldel rule holds and Meyer-Neldel characteristic energy are almost the same in both fresh and aged samples of g-Se as well as As 2 Se 3 glass. This indicates that there is no time-dependent variation in the Meyer-Neldel parameter in the present chalcogenide glasses. [Display omitted] • Observed unique universality of MNCR before and after physical aging. • D. c. Conduction activation energy is changed significantly as a signature of aging. • MN activation energy remains almost unaffected for fresh and aged samples. [ABSTRACT FROM AUTHOR]

The laser-induced effects on dielectric properties of chalcogenide glass (ChGs) have been present in a glassy system of Se–Te–Sn–Cd for possible applications in optics and optoelectronics such as light-controlled capacitance-based touch displays. The temperature/frequency dependence of dielectric relaxation before and after laser exposure was investigated by using laser sources of different wavelengths (405 nm, 532 nm, 690 nm, and 785 nm). The result showed the presence of laser-induced residual effects on dielectric properties (dielectric constant/loss and a.c. conductivity) after the exposure of continuous-wave laser sources of chosen wavelengths. Further analysis indicates that the modification in the meta-stable state due to self-organization is the feasible mechanism of observed persistent light-sensing effects. Illustration of conversion of slab of as-prepared STSC sample into duo-dielectric slab under the influence of laser irradiation. Image 1 • Observation of laser-induced photo-dielectric effects. • Noticeable persistent effects in the observed photo-dielectric phenomenon. • Tuning of dielectric constant and loss depends upon wavelength of laser. • Suitability for use in light-controlled capacitance-based touch displays. [ABSTRACT FROM AUTHOR]

In present work, we have synthesized a novel quaternary Se 76 Te 20 Sn 2 Cd 2 glass in bulk form. Four laser light sources from UV–Vis-IR region have been used to investigate the laser-induced effects on the dielectric properties to check the candidature of this material for possible application in optoelectronics. The temperature and frequency dependence of dielectric constant ( ε ′) and dielectric loss ( ε ″) of unexposed and laser-exposed exposed samples are studied over audible frequency range (1–10 kHz). The comprehensive investigation proves the applicability of the Guintini's theory of dielectric dispersion for the present dielectric loss data. [ABSTRACT FROM AUTHOR]