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In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm)-1, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm2 (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices. [ABSTRACT FROM AUTHOR]

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E0=2.6V/μm and large EFE current density of Je=3.2mA/cm² (at 5.3V/μm). [ABSTRACT FROM AUTHOR]

This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by biasenhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ~380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties. [ABSTRACT FROM AUTHOR]

The diamond nanowire (DNW) film was deposited by N2-enriched microwave plasma-enhanced chemical vapour deposition (MPECVD) process. As-deposited DNW film was treated in O2 plasma which resulted in chemical and microstructural modification. Sheath of the DNW film is chemically constituted by amorphous carbon (a-C)- and graphite (sp2C=C)-like bonding. However, nanowires transformed into ultra-small spherical grains after the O2-plasma treatments. In this condition, a-C and sp2C=C bonding significantly reduced due to plasma etching caused by oxygen atoms. After the O2-plasma treatment, formation of functional groups such as C=O, C–O–C, O–H, O–CH3 and H2O was observed on the surface and inside the wear track as evident from the micro FTIR analysis. H2O is hydrogen bonded to oxygen-containing groups such as –OH and –H. The O2-plasma-exposed DNW film exhibits surface charging and causes formation of dangling bonds and electron trapping centres. This results in significant decrease in contact angle, hence superhydrophilic behaviour. The friction coefficient of O2-plasma-treated film showed super low value ∼0.002 with high wear resistance 2 × 10−12 mm3 N−1 m−1. In the reciprocating ball-on-disc tribology test, only ∼80 nm wear loss was observed after the 1 km of sliding distance at 10 N loads. Such an advance in tribological properties is explained by passivation of covalent carbon bonding and transformation of sliding surfaces by weak van der Waals and hydrogen bondings. High surface energy and the consequent superhydrophilic behaviour of film is attributed to the formation of the above-mentioned functional groups on the surface. This protects against deformation of the wear track leading to extremely high wear resistance. [ABSTRACT FROM AUTHOR]