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In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al2O3/AlN stack gate insulator is presented. The trapping effect of Al2O3/GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an off-state breakdown voltage of 600 V, and high on/off drain current ratio of \(\sim 10^{\mathrm {\mathbf {9}}}\) . [ABSTRACT FROM AUTHOR]