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Major advancements in the directed self-assembly (DSA) of block copolymers have shown the technique's strong potential for via layer patterning in advanced technology nodes. Molecular scale pattern precision along with low cost processing promotes DSA technology as a great candidate for complementing conventional photolithography. Our studies show that decomposition of via layers with 193-nm immersion lithography in realistic circuits below the 7-nm node would require a prohibitive number of multiple patterning steps. The grouping of vias through templated DSA can resolve local conflicts in high density areas, limiting the number of required masks, and thus cutting a great deal of the associated costs. A design method for DSA via patterning in sub-7-nm nodes is discussed. We present options to expand the list of usable DSA templates and we formulate cost functions and algorithms for the optimal DSA-aware via layout decomposition. The proposed method works a posteriori, after place-and-route, allowing for fast practical implementation. We tested this method on a fully routed 32-bit processor designed for sub-7 nm technology nodes. Our results demonstrate a reduction of up to four lithography masks when compared to conventional non-DSA-aware decomposition. [ABSTRACT FROM AUTHOR]