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Heavily impurity-doped single crystals of SixGe1-x alloy with the composition 0.84

Highlights • Mechanical properties and elastic moduli of BN, AlN, GaN and InN were summarized. • Hardness of the nitrides varied with the a -axis lattice constant a as an (n ∼ −6). • Young’s, shear and bulk moduli of the nitrides varied as an (n ∼ −5). • AlGaN showed a very weak alloy-hardening effect. Abstract The mechanical properties and elastic moduli of wurtzite-structured nitrides (BN, AlN, GaN and InN) and AlGaN nitride alloy are evaluated by micro- and nano-indentation studies at room temperature (RT), and the physical processes are discussed. The hardness of BN, AlN, GaN and InN varies depending on the a -axis lattice constant a as an (n ∼ −6), whereas the Young’s, shear and bulk moduli of the nitrides vary as an (n ∼ −5). The properties are governed by the atomic bonding. A homology of indentation hardness scaled using the shear modulus and the magnitude of the Burgers vector for the nitrides is observed. The yield strength and stress-intensity factor of the nitrides at RT are presumed. The alloy-hardening effect in AlGaN alloy is weak compared with that in InGaN alloy. [ABSTRACT FROM AUTHOR]

Presents a study which discussed the photoluminescence spectra of deformed silicon-germanium alloy. Description of the photoluminescence technique; Experimental details; Results.

Undoped and impurity-doped single crystals of Si x Ge1 −x with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall electron and hole mobilities in undoped or lightly impurity-doped SiGe were somewhat lower than those in Si, while in heavily impurity-doped SiGe were comparable to those in Si. The alloy disordered scattering and charged impurity scattering may govern the carrier transport process in undoped or lightly impurity-doped SiGe and in heavily impurity-doped SiGe, respectively. The so-called Irvin’s curve of the practical relation between resistivity and carrier concentration was obtained for SiGe with the composition 0.93 < x < 1. [ABSTRACT FROM AUTHOR]

Abstract: Si-rich Si x Ge1 −x alloys (0.93

We investigated the local atomic structure in GeSi alloy experimentally and theoretically. Extended X-ray absorption fine structure measurements in Czochralski-grown Ge1−xSix bulk alloys showed that the Ge&z.sbnd;Ge and Ge&z.sbnd;Si bond lengths maintain distinctly different lengths and vary linearly with alloy composition across the whole composition range 0. This is in good agreement with the expectation derived from ab initio electronic structure calculations. The result indicates that the bond lengths and bond angles are distorted with alloy composition in GeSi. [Copyright &y& Elsevier]

The local atomic structure in GeSi alloys was studied experimentally and theoretically. By extended X-ray absorption fine structure measurements in Czochralski-grown Ge1−xSix bulk alloys, it is found that the Ge–Ge, Ge–Si (Si–Ge) and Si–Si bond lengths maintain distinctly different lengths and vary in a linear fashion as a function of alloy composition across the entire composition range 0