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A one-selector one resistor (1S1R) array formed of a selector and resistive random access memory (RRAM) is an important way to achieve high-density storage and neuromorphic computing. However, the low durability and poor consistency of the selector limit its practical application. The fabrication of a selector based on egg albumen (EA) is reported in this paper. The device exhibits excellent bidirectional threshold switching characteristics, including a low leakage current (10 -7  A), a high ON/OFF current ratio (10 6 ), and good endurance (>700 days). It is used as a selector to form a 1S1R unit in combination with an EA-based RRAM to effectively solve the leakage current in a crossbar array. A feasible solution is provided for the realization of a protein-based 1S1R array to achieve high-density storage. The 1S1R unit shows characteristics similar to those of synapses in the human brain under impulse excitation and has great potential in simulating the human brain for neuromorphic calculations.)., (© 2023 Wiley-VCH GmbH.)

The realization of artificial synapses based on biomaterials is of great significance for the development of environmentally friendly neuromorphic hardware systems and artificial intelligence. In this sense, a bioartificial synapse composited with egg albumen (EA) and multiwalled carbon nanotubes (MWCNTs) is fabricated. Based on the adjustable weight of the artificial synapse, the plasticity of electrical synapses is explored. Due to the photogenerated carriers and thermoelectric effects of carbon nanotubes, the device has optoelectronic properties, so the optoelectronic synaptic plasticity of the device is explored under light pulses. The device is well suited for biological synapses and shows great potential for applications in future high‐density storage and neuromorphic computing systems. In addition, to further study the physical mechanism of the conductive process of the device, the electrical characteristics of the contact interface between carbon nanotubes doped with Fe substitution and the upper electrode Al are mainly analyzed by first principles, and the adsorption, charge distribution, and band structure between them are theoretically studied. [ABSTRACT FROM AUTHOR]

The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lower threshold voltage, and better stability. A circuit based on auxiliary logic is constructed using this device, and the logic functions of AND, OR, NOT, NAND, and NOR are realized. This device provides an effective potential solution for implementing high-performance electronic devices and large-scale integrated circuits. [ABSTRACT FROM AUTHOR]

Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication of biodegradable and physically transient resistive switching memory devices. A flexible memory device with physically transient properties was fabricated with silver ions and egg albumen composites as active layers, which exhibited characteristics of write-once-read-many-times (WORM), and the incorporation of silver ions improved the ON/OFF current ratio of the device. The device can not only complete the logical operations of "AND gate" and "OR gate", but its active layer film can also be dissolved in deionized water, indicating that it has the characteristics of physical transients. This biocompatible memory device is a strong candidate for a memory element for the construction of transient electronic systems. [ABSTRACT FROM AUTHOR]

In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks. [ABSTRACT FROM AUTHOR]

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 103. Moreover, the RESET voltage decreases as the GO concentration decreases, which indicates that GO layers with different GO concentrations can be adopted to adjust the ON/OFF current ratio and the RESET voltage. When the GO concentration is 0.5 ωt %, the device can be switched more than 200 times. The retention times of all the devices are longer than 104 s. [ABSTRACT FROM AUTHOR]