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Photogenerated carriers in Si-Ge alloy nanocrystals (NCs) prepared by co-sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si0.2Ge0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO2 host with the ionization energy of about 1 eV, are characterized by a long-range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

The enhancement of carrier multiplication in semiconductor nanocrystals attracts a great deal of attention because of its potential in photovoltaic applications. Here, we present the results of investigations of a novel carrier multiplication mechanism recently proposed for closely spaced silicon nanocrystals in SiO2 on the basis of photoluminescence. Using ultrafast pump-probe spectroscopy rigorously calibrated for the number of absorbed photons, we find that adjacent nanocrystals are excited directly upon absorption of a single high-energy photon. We demonstrate efficient carrier multiplication with an onset close to the energy conservation threshold of twice the bandgap, 2Eg. Moreover, with absorption of a single high-energy photon under low pump fluence conditions, it was found that carrier-carrier interaction was significantly suppressed, but the amplitude of the signal was enhanced. We show that these results are in excellent agreement with the dependence of photoluminescence quantum yield on excitation, as reported previously for similar materials. [ABSTRACT FROM AUTHOR]

The percentage of dark silicon nanocrystals, i.e., the nanocrystals that are not able to radiatively recombine after absorption of a photon, is investigated by combining measurements of external and internal quantum efficiencies. The study is conducted on samples prepared by co-sputtering and subsequent heat treatments. We show that the external quantum efficiency is mainly limited by the presence of dark nanocrystals, which induce losses after direct excitation and also, as we propose, by indirect excitation enabled by energy migration. The percentage of dark nanocrystals can be decreased by high quality surface passivation as a result of low-temperature annealing in ambients of O2 and H2. By using a non-passivated sample as a reference, the relation between the size of a nanocrystal and its probability of being dark is studied. Larger nanocrystals are demonstrated to function more likely as dark centers. The study shows that high external quantum efficiencies of Si nanocrystal ensembles can be realized for small, well passivated Si nanocrystals under suppression of excitation diffusion. [ABSTRACT FROM AUTHOR]