1. Electronic and vibrational properties of the two-dimensional Mott insulatorV0.9PS3under pressure
- Author
-
Yonghyun Kim, Matthew J. Coak, Yoo Soo Yi, Suhan Son, Sung Keun Lee, and Je-Geun Park
- Subjects
Materials science ,Condensed matter physics ,Magnetism ,Band gap ,Mott insulator ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Spectral line ,symbols.namesake ,Ab initio quantum chemistry methods ,0103 physical sciences ,symbols ,Antiferromagnetism ,Condensed Matter::Strongly Correlated Electrons ,010306 general physics ,0210 nano-technology ,Electronic band structure ,Raman spectroscopy - Abstract
We present a Raman spectroscopic study of the layered antiferromagnetic Mott insulator ${\mathrm{V}}_{0.9}{\mathrm{PS}}_{3}$ and demonstrate the evolution of the spectra with applied quasihydrostatic pressure. Clear features in the spectra are seen at the pressures identified as corresponding to a structural transition between 20 and 80 kbar and the insulator-metal transition at 120 kbar. The feature at 120 kbar can be understood as a stiffening of interplanar vibrations, linking the metallization to a crossover from two- to three-dimensionality. Theoretical ab initio calculations, using the previously determined high-pressure structures, were able to reproduce the measured spectra and map each peak to specific vibration modes. We additionally show calculations of the high-pressure band structure in these materials, where the opening of a band gap with an included Hubbard $U$ term and its subsequent closing with pressure are clearly demonstrated. This little-studied material shows great promise as a model system for the fundamental study of low-dimensional magnetism and Mott physics.
- Published
- 2019