1. Application of rapid thermal annealing on 1.3–1.55μm GaInNAs(Sb) lasers grown by molecular beam epitaxy
- Author
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Zhao, H., Xu, Y.Q., Ni, H.Q., Zhang, S.Y., Han, Q., Du, Y., Yang, X.H., Wu, R.H., and Niu, Z.C.
- Subjects
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RAPID thermal processing , *QUANTUM wells , *PHOTOLUMINESCENCE , *LASERS - Abstract
Abstract: Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3μm GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T 0 and slope efficiency deteriorate. Furthermore, T 0 has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer''s surface. RTA with deposition of SiO2 was performed to avoid this deterioration, T 0 was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55μm GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55μm was realized by introducing an in situ annealing process. [Copyright &y& Elsevier]
- Published
- 2007
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